The Effect of Reactor Pressure on the Growth of Glow Discharge a-SiN:H

Abstract

The electrical resistivity and N content of a-SiN:H films can be controlled by varying the reactor pressure. This appears to be a result of the increased dissociation of the ammonia feed gas by the change in the electron energy spectrum. The effect of ion bombardment of the substrate surface does not result in observable changes in film quality.

PECVD grown DBR for microcavity OLED sensor

“…The effects of RF power and pressure on the growth rate of silicon dioxide and silicon nitride films was researched for comparison. Increasing deposition rate with pressure (12) and decreasing deposition rate with power density (2) were previously reported. Decreasing refractive index with power density (2) had also been reported.…”