The effect of recoiled oxygen on the annealing properties of Si surface layer implanted with As through SiO 2 films

Izumi, Tomio; Suzuki, Aran; Matsumori, T.; Hirao, Takashi; Fuse, G.

doi:10.1016/0168-583x(85)90573-7

Cited by 5 publications

(1 citation statement)

References 9 publications

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“…From this we conclude that annealing at temperatures below 500 °C does not change the number of defects within the crystal, and that annealing-induced restoration of crystallinity begins at annealing temperatures above 600 °C, at which point the number of defects starts to decrease. These facts were reported by Izumi and colleagues [4] based on measurements of the carrier recovery ratio. The results reported here are in agreement with analysis of backward-scattering and electron-diffraction measurements, which show that annealing leads to the epitaxial growth of a noncrystalline layer until the temperature reaches 600 °C, after which the number of defects decreases [2,3].…”

Section: Measurement Results and Discussionsupporting

confidence: 59%

A photoacoustic study of thermal conductivity annealing curves for a silicon substrate implanted with Si ions

Takabatake¹,

Kobayashi²,

Show³

et al. 2003

Electron Comm Jpn Pt II

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SUMMARYRecrystallization by annealing is part of the processing of ion-implanted semiconductor substrates because the ion implantation generates defects within the crystal. Furthermore, it was reported by Zammit's group [1] that the thermal conductivity of such substrates deteriorates remarkably after implantation. In light of these facts, we have analyzed the photoacoustic signal from a thin layer fabricated on a substrate by ion implantation, and have used the data to measure the thermal conductivity of the implanted layer in the depth direction. Our thermal conductivity measurements can be used to monitor the recrystallization of the implanted layer in the course of the annealing. We fabricated the samples by implanting Si ions into a region on top of a Si substrate at room temperature. The ions used in the implantation had an energy of 150 keV. The ion implantation doses were in the range from 1 × 10 12 to 1 × 10 16 ions/cm 2 . The thickness of the ion-implanted layer was measured by TEM to be 100 nm. By detecting the difference between the phases of photoacoustic signals coming from the ion-implanted region and from the unimplanted region, we could extract the thermal conductivity of the implanted layer from the frequency modulation characteristics of this phase difference. We used this technique to measure annealing curves for the thermal conductivity. Our results indicated that in the course of restoring the crystallinity, the thermal conductivity begins to increase at about 500 °C, and by 750 °C it has recovered to almost the same value as prior to the implantation. Our measured annealing curves for the thermal conductivity correlated strongly with measurement data on the annealing curves of the ESR signal intensity from the same samples. This result makes it clear that measurement of the thermal conductivity by the photoacoustic method is an efficient way to monitor the defect density in implanted layers.

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Section: Measurement Results and Discussionsupporting

confidence: 59%