The effect of Schottky barrier modulation on conduction and failure mechanisms of an Ag/WOx/p-Si based memristor

Abstract

Memristors have attracted considerable attention as next-generation devices for logic and neuromorphic computing applications, owing to their high on/off current ratio, low power consumption, and high switching speed. Despite the various excellent characteristics of memristors, they suffer from unstable conductive filament-based switching when applied in real-world applications. To address this issue, the effects of Schottky barrier modulation on device performance, in terms of conduction and failure mechanisms of an Ag/WOx/p-Si memristor, were investigated in this study by varying the silicon (Si) doping concentration. Through the temperature analysis of I–V characteristics, different conduction mechanisms are observed according to the doping concentration and resistance state. Moreover, endurance failure with several doping concentrations is analyzed by using filament overgrowth phenomena. The results of this study are expected to help in the development of devices with characteristics suitable for application.

Tunable ion energy barrier modulation through aliovalent halide doping for reliable and dynamic memristive neuromorphic systems

“…The barriers were measured by collecting current values at different temperatures with Poole-Frenkel emission (Eq. 1)I∝Vexptrue[qkT(2aV−normalϕnormalT)true]where I is the current, V is the applied voltage, q is the electron charge, k denotes the Boltzmann constant, T is temperature, ϕ T denotes the trap level, ε indicates the insulator permittivity, and a=q/4πεd ( 32 ). Because doped fluoride ions establish trap states underneath the conduction band ( 28 , 33 ), the measured trap levels can be used to calculate the Schottky barrier between TE and F-TiO 2− x layer.…”