The effect of self-esteem on recognition memory for unfamiliar faces

Nakashima, Satomi; Yoshikawa, Sakiko

doi:10.4992/pacjpa.75.0_1am002

Cited by 1 publication

(2 citation statements)

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“…Compressive stress will result in an increase in the magnitude of the Raman peak shift, while tensile stress will result in a decrease in such magnitude. [12][13][14] 3.3 FD-TRM measurement By using the developed FD-TRM system, the scanning of the TR-signal around the indentation mark on the SCS specimen was carried out at 23 °C in the temperature-controlled chamber. The modulation frequency of the heating laser beam was swept from 200 kHz to 5 MHz.…”

Section: Raman Spectroscopymentioning

confidence: 99%

“…Raman spectroscopy, based on measuring changes in phonon frequency that are dependent on stress or strain, has been widely used to measure the stress distribution of single-crystal silicon (SCS). [12][13][14][15][16][17][18] In general, a small laser wavelength for Raman spectroscopy is chosen, because it gives a small penetration depth in silicon. For instance, wavelengths of 488 and 632 nm are approximately correspond to penetration depths of 500 and 2,600 nm, respectively.…”

Section: Introductionmentioning

confidence: 99%

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Thermoreflectance-based in-depth stress distribution measurement technique for single-crystal silicon structures

Miyake

Katō²,

Taguchi³

et al. 2016

Jpn. J. Appl. Phys.

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In this paper, we suggest a new stress measurement technique based on the thermoreflectance method for the estimation of the in-depth stress distribution of fabricated silicon devices. Changing the modulated intensity of a heating laser beam of the frequency-domain thermoreflectance method (FD-TRM) can vary the estimation depth optionally. We developed a measurement system on the basis of the FD-TRM and demonstrated in-depth stress measurement for a single-crystal silicon (SCS) sample. The result measured at a modulation frequency of 3 MHz showed the phase distribution of the TR signal corresponding to the stress distribution determined by 632-nm-excited Raman spectroscopy. In addition, it was found that the phase distribution changed depending on the modulation frequency. The FD-TRM can be a powerful technique for estimating the in-depth stress distribution of silicon materials.

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Section: Raman Spectroscopymentioning

confidence: 99%