The effect of series resistance on calculation of the interface state density distribution in Schottky diodes

Ayyıldız, E.; Temırcı, Cabir; Batı, Bedia; Türüt, A.

doi:10.1080/00207210110044396

Cited by 13 publications

(11 citation statements)

References 16 publications

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“…This function is derived from the thermionic current expression given in equation (1 The voltage dependence of the BH in the MIS diodes, that is, the barrier increase with increasing forward bias voltage in the forward bias I -V measurements comes from the potential change across the interfacial layer rather than from image force lowering. The potential drop across the HfO 2 interfacial layer varies with bias due to the electrical field present in the semiconductor and the change in the interface state charge as a result of the applied voltage, and thus modifies the BH [6][7][8][9][10][11][12][13][14][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54]. As mentioned by Budhraja et al [22,23], the interface Table 2.…”

Section: Resultsmentioning

confidence: 99%

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Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition

Karabulut

2019

Bull Mater Sci

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X-ray photoelectron spectroscopy has been carried out to characterize the surface of the hafnia (HfO 2) thin films grown on n-GaAs wafer by atomic layer deposition, and the surface morphology of the HfO 2 layer on GaAs has been analysed using atomic force microscopy. The barrier height (BH) values of 1.03 and 0.93 eV (300 K) for the Au/Ti/HfO 2 /n-GaAs structures with 3-and 5-nm HfO 2 interfacial layers, respectively, have been obtained from the I-V characteristics of the devices, which are higher than the value of 0.77 eV (300 K) for the Au/Ti/n-GaAs diode fabricated by us. Therefore, it can be said that the HfO 2 thin layer at the metal/GaAs interface can also be used for BH modification as a gate insulator in GaAs metal-oxide semiconductor (MOS) capacitors and MOS field-effect transistors. The ideality factor values have been calculated as 1.028 and 2.72 eV at 400 and 60 K; and as 1.04 and 2.58 eV at 400 and 60 K for the metal-insulating layer-semiconductor (MIS) devices with 3-and 5-nm interfacial layers, respectively. The bias-dependent BH values have been calculated for the devices by both Norde's method and Gaussian distribution (GD) of BHs at each sample temperature. At 320 K, the b (V) value at 0.70 V for a 3-nm MIS diode is about 1.08 eV from the b (V) vs. V curve determined by the GD, and about 0.99 eV at 0.58 V for a 5-nm MIS diode. It has been seen that these bias-dependent BH values are in close agreement with those obtained by Norde's method for the same bias voltage values.

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Section: Resultsmentioning

confidence: 99%

“…According to the potential fluctuation model [40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55] which is related to thermionic emission over a GD of Schottky barriers, the temperature dependence expressions of the ideality factor and BH are given by [41][42][43] 1…”

Section: Resultsmentioning

confidence: 99%

Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition

Karabulut

2019

Bull Mater Sci

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“…İdeal ve kaliteli bir diyot yapılabilmesi için kontak haline getirilecek maddelerin yüzeylerinin çok iyi bir şekilde temiz, parlak, oksitsiz ve pürüzsüz, organik ve ağır metal kirliliklerden arındırılmış olmalarının önemi büyüktür. Bu parçaların kimyasal olarak temizlenmesinde RCA1 ve RCA2 prosedürleri takip edildi [12][13].…”

Section: Materyal Ve Metod 21 Numunenin Temizlenmesi Ve Kontak Için unclassified

The Effects of Thermal Annealing and Sample Temperature on Current-Voltage Characteristics of Au/n-Si/Al Schottky Diodes

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Orak

2017

Cumhuriyet Science Journal

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Günümüz elektronik teknolojisinde ve elektronik sanayinde çok fazla kullanılan Schottky kontaklar geniş bir uygulama alanına ve önemli bir yere sahiptir. Bu sebeple bu yapılar oldukça önemlidir ve birçok araştırmanın konusu olmuştur. Diyodun tavlama ve numune sıcaklığıyla karakteristik parametrelerinin değişip değişmediği görmek için diyotların tavlamaya ve numune sıcaklığına bağlı akım-gerilim karakteristikleri incelendi. Yapılan hesaplamalar sonucunda tavlanmamış diyot için oda sıcaklığında idealite faktörü ve engel yüksekliği I-V ölçümlerinden sırasıyla 1,24 ve 0,77 eV elde edildi. Yine 200 0 C tavlanmış diyot için oda sıcaklığında idealite faktörü ve engel yüksekliği sırasıyla 1,08 ve 0,76 eV olarak hesaplanmıştır. Buna göre tavlama neticesinde diyot tavlama sıcaklığına bağlı olarak daha kararlı hale geldiği söylenebilir. Bu durum, metal yarıiletken ara yüzeyindeki istenmeyen fazların tavlama sıcaklığına bağlı olarak azaldığının bir kanıtıdır. Au/n-Si/Al Schottky diyotların tavlanmadan önce ve 200 0 C'de tavlandıktan sonra seri direnç ve engel yüksekliği değerleri Norde Fonksiyonları kullanılarak tüm sıcaklıklar için hesaplandı.

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“…In this article, Schottky parameters have been examined for both situations; forward bias and reverse bias. Ideality factor (IF) (nIV) [1,2], barrier height (ΦBH) [3,4], Cheung functions (Ch1, Ch2) [5,6], built-in potential (Vbi) [1,2], donor density (ND) [7], zero-voltage depletion length (W0 or L0), interfacial thickness (Dit) [6], interface state density (NSS) [8,9] and effective Fermi level (EF) are known as Schottky parameters [10]. A Schottky diode is comprised of four sections, namely ohmic junction, base structure, depletion layer and Schottky junction [10,11].…”

Section: Introductionmentioning

confidence: 99%

Differential Depletion Charge Density of the Approximation of Schottky Diodes as Ohmic Annealed a Variety of Temperatures

Korkut¹

2020

Gazi University Journal of Science

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The effect of series resistance on calculation of the interface state density distribution in Schottky diodes

Cited by 13 publications

References 16 publications

Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition

Barrier height modification in Au/Ti/n-GaAs devices with a $$\hbox {HfO}_{2}$$ HfO 2 interfacial layer formed by atomic layer deposition

The Effects of Thermal Annealing and Sample Temperature on Current-Voltage Characteristics of Au/n-Si/Al Schottky Diodes

Differential Depletion Charge Density of the Approximation of Schottky Diodes as Ohmic Annealed a Variety of Temperatures

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