2016
DOI: 10.1063/1.4973292
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The effect of shallow vs. deep level doping on the performance of thermoelectric materials

Abstract: It is well known that the efficiency of a good thermoelectric material should be optimized with respect to doping concentration. However, much less attention has been paid to the optimization of the dopant's energy level. Thermoelectric materials doped with shallow levels may experience a dramatic reduction in their figures of merit at high temperatures due to the excitation of minority carriers that reduces the Seebeck coefficient and increases bipolar heat conduction. Doping with deep level impurities can de… Show more

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Cited by 18 publications
(19 citation statements)
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“…[25,[39][40][41] At high In content (x ≥ 0.075), Indium induced deep levels, enlarged E g , and m * n effectively mitigate the minority carriers (electrons). [33] The temperature dependence of S in the x-series gets weaker upon high In doping, consistent with the variation of n H ( Figure S6, Supporting Information). The weaker temperature dependence of n H and S are favorable for attaining a plateau of high zT.…”
Section: Interplay Between the Shallow And Deep Levels By In Dopingsupporting
confidence: 74%
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“…[25,[39][40][41] At high In content (x ≥ 0.075), Indium induced deep levels, enlarged E g , and m * n effectively mitigate the minority carriers (electrons). [33] The temperature dependence of S in the x-series gets weaker upon high In doping, consistent with the variation of n H ( Figure S6, Supporting Information). The weaker temperature dependence of n H and S are favorable for attaining a plateau of high zT.…”
Section: Interplay Between the Shallow And Deep Levels By In Dopingsupporting
confidence: 74%
“…[32] v) Introducing deep level states to regulate the shallow level states. [33] Here, deep and shallow refer to the energy difference from the defect level to the conduction or valence band (VB) edge. The states of defect level with the energy difference greater than 100 meV are termed "deep level" states.…”
Section: Introductionmentioning
confidence: 99%
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“…In spite of the low impurity concentration, deep‐level impurities can act as a recombination center, thus providing a platform for the annihilation of electron–hole pairs, which is favorable for shortening the lifetime of minority carriers. Therefore, in order to reduce the lifetime of minority carriers, deep‐level impurities like transition metals can be introduced into thermoelectric materials through defect chemistry in real space to introduce deep‐level trap in reciprocal space, which opens up a new possibility for effective suppression of the bipolar effect …”
Section: Strategies For the Optimization Of Electrical Transport Propmentioning
confidence: 99%
“…However, a high dark current was also observed, which limits the improvement of the specific detectivity, as shown in Figure 14g-i. The low size-dependent crystallite boundary barrier height may be responsible for the high dark current, since the free carrier concentration is relatively low due to the deep energy level doping of oxygen [104,105], as shown in Figure 14f. These results show a new approach to synthesize and sensitize PbSe polycrystalline coatings for high optical, electrical, and optoelectronic performances.…”
Section: Preparation Via Ion Beam Implantationmentioning
confidence: 99%