The effect of Sn impurity on the optical and structural properties of thin silicon films

Tin-Induced Crystallization of Amorphous Silicon under Pulsed Laser Irradiation

“…i.e. about 350 ∘ C, which agrees with the data of previous works concerning the temperature of the tininduced crystallization of amorphous silicon [18][19][20][21].…”

“…One of the promising ways in this direction is the application of the phenomenon of metal-induced crystallization (MIC) of amorphous silicon (a-Si) [13][14][15][16][17]. In particular, a possibility to form Si nanocrystals 2-7 nm in dimensions and with a phase volume fraction of up to 80% in the a-Si matrix with the help of the low-temperature tin-induced Si crystallization was demonstrated in [18][19][20]. Those experimental results were interpreted with the use of a new mechanism of MIC, which was proposed in works [20][21][22] and considerably differs from those known for other metals [13,[15][16][17].…”

Tin doping effect on crystallization of amorphous silicon obtained by vapor deposition in vacuum

“…At the same time, Sn atoms available in Si significantly slow down the degradation of these characteristics caused by heating [4][5][6] and radiation [6][7][8]. The first reports about crystallization of Si a  films doped by Sn from the gaseous phase in the process of film formation were made in [9]. Their results were further confirmed in [10], where the dominant size of Si crystals in amorphous matrix was close to few nanometers.…”

“…Their results were further confirmed in [10], where the dominant size of Si crystals in amorphous matrix was close to few nanometers. However, the distribution of Sn atoms inside the film of Si:Sn alloy produced by the authors of [9] was very heterogeneous. Therefore, the aim of this work was to study of the effect of different Sn concentrations on phase state Si:Sn alloy with controlled distribution of Sn in the layers suitable for Raman scattering method investigation.…”

Tin-induced crystallization of amorphous silicon assisted by a pulsed laser irradiation

“…In particular, the possibility to form Si nanocrystals in amorphous Si matrix at 2 to 5 nm sizes and the phase volume fraction up to 80% was shown by means of tin-stimulated crystallization of amorphous Si at low temperatures [18][19][20]. These experimental results interpreted by the new MIC mechanism proposed in the papers [20][21][22].…”