The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

Phan, Hoang‐Phuong; Dao, Dzung Viet; Wang, Li; Dinh, Toan; Nguyen, Nam‐Trung; Qamar, Afzaal; Tanner, Philip; Dimitrijev, Sima; Zhu, Yong

doi:10.1039/c4tc02679a

Cited by 28 publications

(23 citation statements)

References 37 publications

(58 reference statements)

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“…The performance of SiC‐based sensors was evaluated by comparing with recently reported devices. As illustrated in Figure S6 in the Supporting Information, the device's GF is larger than most of the wearable sensors and conventional SiC‐based strain sensors . Compared to the sensors developed by laser‐induced carbonization of PI and laser‐induced reduction of graphene oxide, the device in our work has higher sensitivity.…”

Section: Resultsmentioning

confidence: 89%

“…Figure c shows the electromechanical responses curves for the LDW sensor at strains smaller than 1%, which were taken by following the standard procedure reported in our previous studies (Figure S9 in the Supporting Information) . As shown in Figure c, the minimum detectable strain of the device is ≈0.05%, which is relatively larger than that (0.02%) of conventional SiC‐based sensors . Figure d shows the ∆ R / R o of the SiC‐based device at different frequencies from 0.2 to 1 Hz.…”

Section: Resultsmentioning

confidence: 95%

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Laser Direct Writing of Ultrahigh Sensitive SiC‐Based Strain Sensor Arrays on Elastomer toward Electronic Skins

Gao

et al. 2018

Adv Funct Materials

161

134

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Electronic skins (e-skins) have been widely investigated as important platforms for healthcare monitoring, human/machine interfaces, and soft robots. However, mask-free formation of patterned active materials on elastomer substrates without involving high-cost and complicate processes is still a grand challenge in developing e-skins. Here, SiC-based strain sensor arrays are fabricated on elastomer for e-skins by a laser direct writing (LDW) technique, which is mask-free, highly efficient, and scalable. The direct synthesis of active material on elastomer is ascribed to the LDW-induced conversion of siloxanes to SiC. The SiC-based devices own a highest sensitivity of ≈2.47 × 10 5 achieved at a laser power of 0.8 W and a scanning velocity of 1.25 mm s −1 . Moreover, the LDW-developed device provides a minimum strain detection limit of 0.05%, a small temperature drift, and a high mechanical durability for over 10 000 cycles. When it is mounted onto human skins, the SiC-based device is able to monitor external stimuli and human health conditions, with the capability of wireless data transmission. Its potential application in e-skins is further proved by an LDW-fabricated device having 3 × 3 SiC sensor array for tactile sensing.

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Section: Resultsmentioning

confidence: 89%

Section: Resultsmentioning

confidence: 95%

Laser Direct Writing of Ultrahigh Sensitive SiC‐Based Strain Sensor Arrays on Elastomer toward Electronic Skins

Gao

et al. 2018

Adv Funct Materials

161

134

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“…Strain sensors have been widely employed in numerous applications including bio-analysis, inertia sensing, and structural health monitoring (SHM) [1][2][3][4] . For instance, in SHM, strain sensors can detect crack generation, delamination between layers, and thermal expansions due to the changes in temperature 5,6 .…”

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confidence: 99%

Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Phan

Dinh

Kozeki

et al. 2016

Applied Physics Letters

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This paper presents an innovative nano strain-amplifier employed to significantly enhance the sensitivity of piezoresistive strain sensors. Inspired from the dogbone structure, the nano strain-amplifier consists of a nano thin frame released from the substrate, where nanowires were formed at the centre of the frame. Analytical and numerical results indicated that a nano strain-amplifier significantly increases the strain induced into a free standing nanowire, resulting in a large change in their electrical conductance. The proposed structure was demonstrated in p-type cubic silicon carbide nanowires fabricated using a top down process. The experimental data showed that the nano strain-amplifier can enhance the sensitivity of SiC strain sensors at least 5.4 times larger than that of the conventional structures. This result indicates the potential of the proposed strain-amplifier for ultra-sensitive mechanical sensing applications.Strain sensors have been widely employed in numerous applications including bio-analysis, inertia sensing, and structural health monitoring (SHM)1-4 . For instance, in SHM, strain sensors can detect crack generation, delamination between layers, and thermal expansions due to the changes in temperature 5,6 . Among several methods to detect strain, the piezoresistive effect in semiconductors has been widely adopted due to its high sensitivity and simple readout circuitry 7-10 . Recent studies have been focusing on enhancing the sensitivity of piezoresistive strain sensors by down-scaling piezoresistive elements to a nanometer scale 11 . He and Yang reported a giant longitudinal piezoresistive coefficient of −3550 × 10 −11 Pa −1 in silicon nanowires, which is at least one order of magnitude large than that of bulk Si material 12 . The enhancement of the piezoresistive effect in Si nanowires was hypothesized to be caused by a piezopinch phenomenon 13 . Following the work of He and Yang, a large number of studies have been carried out to investigate the piezoresistive effect of nanowires fabricated using different methods and aligned in several crystallographic orientations. Milner et al. reported the giant piezoresistive effect in Si micro and nano wires fabricated using a topdown process 14 . In addition, the authors also counteracted the hypothesis of the piezopinch phenomenon, and suggested that the dynamic properties of surface charge on micro/nanowires could be the main reason causing the significant change in the piezoresistance of nanowires 11,14 . Nevertheless, the electrical conductance of Si nanowires, using the dynamic properties of surface state, varies with time, which is not a desirable property for practical strain sensing applications. Additionally, in contrast to the results of He and Yang, the piezoresistive effect in both bottom-up grown Si nanowires 15,16 , and top-down fabricated Si 17-19reported recently, did not show significant improvement in sensitivity compared to when bulk materials are used. In another study, Nakamura et al. theoretically investigated the influenc...

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“…Among 200 polytypes of SiC, only 3C-SiC can be grown epitaxially on a large Si-wafer at around 1000 C. As a result, the cost of the wafer reduces significantly [10]. Hence, the 3C-SiC on Si structure has been used for a number of N/MEMS applications, for instance, temperature sensors [11]- [12], piezoresistive sensors [13]- [15], and pressure sensors [16]- [17].…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet and Visible Photodetection Using 3C-SiC/Si Hetero-Epitaxial Junction

Foisal

Dinh

Tanner

et al. 2018

Sustainable Design and Manufacturing 2018

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This paper demonstrates the prospect of using a 3C-SiC/Si heterostructure as an ultraviolet and visible photodetector. The heterojunction has been grown epitaxially on Si-substrate via a Low Pressure Chemical Vapor Deposition technique at 1000 C. The detector shows a good diode characteristic with a rectification ratio of 1.03×10 3 and a reverse leakage current of 7.2×10 -6 A at 2V in dark conditions. The responsivity of the device is found to be 5.4×10 -2 A/W and 3.18×10 -2 A/W at a reverse bias of 2V under visible (635 nm) and UV (375 nm) illumination, respectively. An energy band diagram is proposed to explain the photosensitivity of the heterostructure.

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The effect of strain on the electrical conductance of p-type nanocrystalline silicon carbide thin films

Cited by 28 publications

References 37 publications

Laser Direct Writing of Ultrahigh Sensitive SiC‐Based Strain Sensor Arrays on Elastomer toward Electronic Skins

Laser Direct Writing of Ultrahigh Sensitive SiC‐Based Strain Sensor Arrays on Elastomer toward Electronic Skins

Nano strain-amplifier: Making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Ultraviolet and Visible Photodetection Using 3C-SiC/Si Hetero-Epitaxial Junction

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