The effect of substrate materials on holding time degradation in MOS dynamic RAM

Otsuka, Hideo; Watanabe, Kikuo; Nishimura, Hiromichí; Nihira, H.

doi:10.1109/edl.1982.25530

Cited by 17 publications

(4 citation statements)

References 8 publications

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“…Epitaxial material such as p/p ϩ suppresses latch-up, and improves GOI and DRAM refresh performance compared to polished wafers 1,121,172,[329][330][331] and, accordingly, has often been the material of choice for logic ICs such as ASICs, microprocessors, and EEPROMS. The onset of trench isolation, however, has reduced somewhat the concern over latch-up.…”

Section: Epitaxial Materialsmentioning

confidence: 99%

“…A significantly reduced bulk recombination lifetime, r , due to IG, for example, would increase the diffusion current; increased substrate doping, such as in a p ϩ substrate, however, substantially decreases the diffusion current as discussed by Pallab Chatterjee and colleagues 329 as well as Hideki Iwai and colleagues. 330,331 The utilization of a lightly doped epitaxial layer on a heavily doped substrate is a particularly useful material configuration for both reducing the bulk diffusion current and achieving a high generation lifetime in the vicinity of the surface. [329][330][331]345 It has been noted that the benefits of IG as measured at room temperature, however, may be somewhat negated at device operating temperature due to the g-r current generated by the IG centers.…”

Section: 344mentioning

confidence: 99%

“…330,331 The utilization of a lightly doped epitaxial layer on a heavily doped substrate is a particularly useful material configuration for both reducing the bulk diffusion current and achieving a high generation lifetime in the vicinity of the surface. [329][330][331]345 It has been noted that the benefits of IG as measured at room temperature, however, may be somewhat negated at device operating temperature due to the g-r current generated by the IG centers.…”

Section: 344mentioning

confidence: 99%

“…330 In one case, a high ͑gen-eration͒ lifetime is desired to facilitate the retention of charge for an extended period of time ͑i.e., high DRAM circuit refresh time͒. On the other hand, high ͑generation͒ lifetime material is especially susceptible to discharge of the DRAM storage node and, thereby, loss of information content due to transient electronic phenomena.…”

Section: 344mentioning

confidence: 99%

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An Electronics Division Retrospective (1952-2002) and Future Opportunities in the Twenty-First Century

Huff¹

2002

J. Electrochem. Soc.

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The emergence of crystalline silicon and silicon-based materials such as silicon-germanium as the premier materials and the personnel driving the integrated circuit ͑IC͒ microelectronics revolution will be reviewed. The major threshold events from the 1940s through the mid-1960s, presaging the onset of the large scale integration microelectronics era, will be highlighted. The major silicon material challenges such as dislocation-free single-crystal growth, plastic deformation, the point-defect dilemma, gettering, oxygen in silicon, carrier lifetime, and controlled point-defects in the silicon crystal during the evolution of silicon microelectronics from large scale integration through the very large scale integration era in the 1970s and the 1980s into the ultralarge scale integration era of the 1990s will then be reviewed. Opportunities in epitaxy, wafer cleaning, silicon-on-insulator, silicon-germanium, IC scaling and potential changes in device configuration and IC architecture in the evolution towards the 64 Gbit DRAM and 9 G transistor high-performance MPU logic era in 2016 ͑per the 2001 edition of the International Technology Roadmap for Semiconductors͒ will be discussed in the context of silicon-based microelectronics. The complementary role of compound semiconductors, nanoelectronics and the continuing initiative to obtain an optoelectronic system compatible with silicon will also be discussed. Finally, nonsilicon materials and device configurations will briefly be noted. © 2002 The Electrochemical Society. ͓DOI: 10.1149/1.1471893͔ All rights reserved.Available electronicallyApril 11, 2002. The computer and communications age has catapulted electronics to its current status as the dominant global industry. Indeed, we are in the midst of a revolution brought about by the availability of inexpensive information acquisition, manipulation, and distribution systems. Exploitation of electron and hole conduction in silicon has resulted in electronic memory and logic circuits such as the dynamic random access memory ͑DRAM͒ and microprocessor. Control of the interaction of photons with compound semiconductors has resulted in optical devices such as the laser and optical fiber networks. This revolution has been and will continue to be dependent on our ability to control electronic and photonic material processing techniques for the manufacture of useful devices, circuits and systems. The preparation and detailed processing sequence of a material from crystal growth through device and circuit fabrication determines the microstructure and, therefore, the electronic properties of the material and resulting device and circuit performance, yield, and reliability. Electronic materials include semiconductors, dielectrics, magnetics, piezoelectrics, optoelectronic materials, and optical fibers which may be utilized in crystalline, polycrystalline, or amorphous form. Materials are indeed the sine qua non of electronic and optical devices and circuits.An extensive list of relevant citations through 1997 is noted in Ref. ...

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