The effect of substrate orientation on the structure of epitaxial films of II–VI compounds

Holt, D. B.; Wilcox, D.M.

doi:10.1016/0040-6090(72)90279-9

Cited by 18 publications

(5 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…CdSe films deposited in vacuum on unheated glass substrates consist mostly of the hexagonal phase [7]. On smooth amorphous substrates at room temperature or up to about 373 K the cubic structure tends to be formed partly, while the hexagonal structure is in general increasingly developed at higher temperatures [8]. This dominant orientation in the (002) direction has already been reported [9] on sprayed CdSe also.…”

supporting

confidence: 54%

Influence of substrate temperature on the structural and optical properties of CdSe thin films

Sarma

Rangarajan

Murali

1995

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

supporting

confidence: 54%

Influence of substrate temperature on the structural and optical properties of CdSe thin films

Sarma

Rangarajan

Murali

1995

Phys. Stat. Sol. (a)

View full text Add to dashboard Cite

“…In many other experiments on the epitaxial orientation of these materials on mica, NaC1, etc (e.g. reviewed by Holt and Wilcox 1971), thin films condensed at 20" to 100°C were also often random-polycrystalline and epitaxy was only seen at higher temperatures.…”

Section: Introdiictionmentioning

confidence: 98%

“…(See e.g. reviews of film growth of II-VI materials by Ray (1969) and Holt and Wilcox (1971). For particular reference to CdS see Addiss (1962), Dresner and Shallcross (1963), Shalimova et aZ (1964), Shallcross (1966), Foster (1967), Meirsschaut (1971), for CdSe see Kubovy et a1 (1969), Dhere and Goswami (1969), Svechnicov et a1 (1972), Snejdar and Jerhot (1972) and Dhere et aZ(1977), and for CdTe see Goldstein and Pensak (1959), Semiletov (1962), Kamiyama et aZ(1962), Glang et aZ(1963), Shalimova et a1 (1966) and Matsumo and Tnoue (1967)) Increased substrate temperature was also found to lead to larger crystals and increased deposition rate to increase the degree of imperfection in the films.…”

Section: Introdiictionmentioning

confidence: 99%

The structure and growth of thin films of CdS, CdSe and CdTe condensed in vacuum on to polished stainless steel substrates at room temperature

Boichot¹,

Wilman²

1980

J. Phys. D: Appl. Phys.

View full text Add to dashboard Cite

Polycrystalline films of CdS, CdSe, and CdTe up to 104 AA thick were condensed on to polished stainless steel substrates initially at room temperature in residual air at pressures from 5*10-3 to 10-7 Torr, at normal and oblique vapour incidence. Surface structures at a series of film thicknesses were determined by high-energy electron diffraction. Randomly disposed hexagonal crystals were observed up to a thickness H, at the surfaces of films condensed at residual air pressure p after which strong (0001) orientation was developed in the further deposition. At normal incidence H was approximately 1000 AA for p=5*10-3 Torr, and H rose with decrease in p, up to approximately 1500 AA at 5*10-7 Torr.

show abstract

Section: ~000mentioning

confidence: 99%

“…sin a --]gdif~] tan 0 dl or sinai_ ( dl --df ) tan 0 [5] In the present case within experimental error, e ----30 ~ Calculating the spacings of the 022 planes in CdSe and Ge using the expression dhkl : a/(h 2 -~ k 2 ~-le) 1/2 where the lattice parameters, a, for CdSe and Ge are 6.077A and 5.658A, respectively, and substituting into Eq. [5] gives ~ ----2024 '. This angle does not appear to have any simple crystallographic significance, despite the crystallographic appearance of the ,-~ 30 ~ angle of rotation of the Moire spot arrays from their positions in a parallel epitaxial alignment pattern.…”

Section: ~000mentioning

confidence: 99%

Epitaxial Growth and Structure of CdSe Evaporated in Vacuum onto Ge

Gejji

Holt

1975

J. Electrochem. Soc.

View full text Add to dashboard Cite

Films of CdSe were grown by focused electron beam evaporation in vacua in the 10 -6 Torr range on the three singular faces of Ge. The structures of the films were examined by transmission electron microscopy. On (100) oriented substrates, epitaxy was obtained throughout the range of substrate temperatures from 35() ~ to 450~ and the films had the sphalerite structure in parallel alignment with the Ge. The diffraction patterns contained no satellite spots but <111> streaks were present. On (110) oriented substrates the epitaxial growth range of temperatures was 300~176The films again had basically the sphalerite structure in (110) orientation but the domain-form faulted structure was found in all the films. On (111) Ge surfaces, CdSe grew epitaxially at all temperatures from 350 ~ to 450~ and had the sphalerite structure in (111) orientation. Streaks but no satellite spots were observed in the electron diffraction patterns. Well-defined rosettes of Moire spots were observed in the transmission electron diffraction patterns of areas where comparable thicknesses of CdSe and Ge were present in the cases of both (100) and (111) substrates. These Moire diffraction patterns confirmed the parallel alignment of the films on (100) substrates but showed that on (111) substrates the films were azimuthally rotated through a small angle from the parallel orientation.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.132.123.28 Downloaded on 2015-05-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 130.132.123.28 Downloaded on 2015-05-15 to IP Vol. I22,No. 4

show abstract

The effect of substrate orientation on the structure of epitaxial films of II–VI compounds

Cited by 18 publications

References 16 publications

Influence of substrate temperature on the structural and optical properties of CdSe thin films

Influence of substrate temperature on the structural and optical properties of CdSe thin films

The structure and growth of thin films of CdS, CdSe and CdTe condensed in vacuum on to polished stainless steel substrates at room temperature

Epitaxial Growth and Structure of CdSe Evaporated in Vacuum onto Ge

Contact Info

Product

Resources

About