The effect of Ta on structure and magnetic properties in Fe–N films

New theoretical approach to the RF-dynamics of soft magnetic FeTaN films for CMOS components

“…In the scope of applications in microwave devices, many theoretical and experimental works have been done on the material system FeTaN [1][2][3][4].…”

Uniaxial anisotropy and high-frequency permeability of novel soft magnetic FeCoTaN and FeCoAlN films field-annealed at CMOS temperatures

“…Therefore, film materials with high temperature stability up to 400 or 500 C should be regarded [1,2]. Especially, FeTaN films could play a decisive role because of their excellent soft magnetic properties, due to the suppression or at least reduction of an exceeding Fe grain growth at annealing temperatures in the range of 400-500 C. The suppression is caused by refractory metals-nitride (TaN) grain boundaries acting as a grain refiner [3,4]. By the incorporation of a certain nitrogen amount the grain diameter can be directly influenced which results in the change of the magnetocrystalline anisotropy, the saturation magnetization and magnetic softness [5].…”

Magnetic Properties, Microwave Characteristics, and Thermal Stability of the FeCoAlN Films

“…FeXN (X = Ta, Hf, Ti, Al, etc.) films are considered to be promising materials for their excellent soft magnetic properties, high saturation magnetization, and better reliabilities than the FeN films (Ref [3][4][5]. However, the uniaxial anisotropy fields of these films are typically below 20 Oe in the as-deposited states and can be reduced by annealing at temperatures above 150°C ( Ref 6,7).…”