The Effect of Temperature and Base Thickness on Photoelectric Parameters of Amorphous Silicon Solar Cells

Abstract

One of the important tasks of photovoltaics is the design of flexible solar cells that are resistant to environmental influences and designed to cover surfaces of various shapes. Therefore, pin-structured amorphous silicon-based solar cells with flexible properties were studied in this study. Amorphous silicon has a higher absorption coefficient and band gap than crystalline silicon. A high absorption coefficient proves that a high efficiency can be achieved in thin films. According to the obtained simulation results, the maximum values of the open circuit voltage, short-circuit current, fill factor and efficiency of the amorphous silicon-based solar cell were 1.2044 V, 13.49 mA/cm 2 , 80.03 % and 12.18 %, respectively, as well as achieved them at a base thickness of 35, 20, 3 and 15 µm, respectively. The effect of temperature on an amorphous silicon-based solar cell with optimal thickness was studied because amorphous silicon is very sensitive to external influences such as light intensity and temperature. Therefore, it is important to study the effect of temperature on the properties of amorphous silicon-based solar cells. As the temperature increased, the open circuit voltage decreased, but the short-circuit current, fill factor, and efficiency increased. It was found that the temperature coefficients of open circuit voltage, short circuit current, fill factor and efficiency are − 1.68×10 -3 , 2.24×10 -3 , 4.5×10 -5 and 2.27×10 -4 1/K, respectively.