The Effect of Temperature Variations on the Optical Properties of Tin Oxide Film with Doping Aluminum, Fluorine and Indium for Semiconductor Electronic Devices

Abstract

The manufacture of a thin layer of SnO2: (Al + F + In) was carried out by using the sol-gel spin coating method on a glass substrate with various temperatures (25, 50, 100, 150, and 200 °C).The purpose of this study is to determine the optical properties of thin layers which include transmittance, absorbance, band gap energy and activation energy. The optical properties of the coating were characterized using a UV-Vis spectrophotometer with a wavelength of 200-1100 nm. The results showed that the absorbance value increased with increasing temperature at a wavelength of 300 nm. The absorbance values ​​obtained for temperature variations were in the percentages of 95: 5% and 75: 25%, respectively 3.46-4.50 and 3.96-5.76. The transmittance value obtained increased, namely 73.00-86.30% and 74.20-99.30%. In addition, the energy band gap decreased from 3.60-3.41 eV and 3.57-3.31 eV for direct allowed, while 3.69-3.58 eV and 3.65-3.54 eV for indirect allowed. Activation energy decreased from 2.00-1.18 eV and 1.60-1.12 eV. In general, the absorbance and transmittance values ​​increase with increasing ripening temperature and the addition of doping aluminum, fluorine, and indium, while the bandgap energy and activation energy values ​​obtained decrease with increasing ripening temperature and increasing the doping percentage of aluminum, fluorine, and indium. The decrease in the value of the bandgap energy and the activation energy can make it easier for electrons to move from the valence band to the conduction band so that the material is slightly conductive and acts as a semiconductor.