The effect of TEOS plasma parameters on the silicon dioxide deposition mechanisms

Abbasi-Firouzjah, Marzieh; Hosseini, Seyed-Iman; Shariat, M.; Shokri, Babak

doi:10.1016/j.jnoncrysol.2013.03.008

Cited by 49 publications

(34 citation statements)

References 27 publications

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“…When the ammonia gas in the gas flow ratio reached 0.75, the intensity of the Si-O signal was markedly decreased and its peak apparently shifted to 1051 cm −1 with a satellite peak related to the signals overlapped by the C-H/C-C bonds at about 1101 cm −1 [29]. Such organic C-H/C-C bonds (~1105 cm −1 ) and the organosilicon (Si-CH 2 -Si) bond absorbed at approximately of 1037 cm −1 became the dominating signals of the FTIR spectrum for the film synthesized from the TMS-NH 3 gas mixture [16,20,29,36]. In addition, the introduced ammonia gas in the glow discharge also resulted in the films exhibiting two weak signals at about 910 and 736 cm −1 which were assigned to the Si-N and Si-C bonds, respectively [13,20,29,37].…”

Section: Resultsmentioning

confidence: 96%

“…As shown in Figure 1a, the TMS monomer reacted with the oxygen gas, resulting in several additional emission lines other than the transition lines determined from the pure oxygen plasma shown in the inset figure. The emission lines at about 558, 777, and 844 nm were relevant to the transition lines of the oxygen atoms (O) or ions (O 2 + ) [15,16]. The emission lines at about 450, 482, and 518 nm were related to the carbon-containing species of CO [16,17], whereas the emission peak at about 655 nm was assigned as the atomic emission of excited H α [18,19].…”

Section: Resultsmentioning

confidence: 99%

“…The emission lines at about 558, 777, and 844 nm were relevant to the transition lines of the oxygen atoms (O) or ions (O 2 + ) [15,16]. The emission lines at about 450, 482, and 518 nm were related to the carbon-containing species of CO [16,17], whereas the emission peak at about 655 nm was assigned as the atomic emission of excited H α [18,19]. In addition, the emission lines around the short wavelengths with two strong peaks at approximately 288 nm and 312 nm emerged from the species of the SiO and OH radicals, respectively [18,[20][21][22].…”

Section: Resultsmentioning

confidence: 99%

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Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Liu

Chen

et al. 2017

Applied Sciences

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Abstract:The gas barrier property of a silicon oxide (SiO x ) film synthesized from plasma-enhanced chemical vapor deposition using the tetramethysilane (TMS)-oxygen gas mixture was modified by introducing ammonia gas in the glow discharge. The change in the glow discharge with the ammonia gas incorporation was monitored by an optical emission spectrometer (OES). Structures, chemical bond configurations, and material properties of the resulting films were investigated. The introduced ammonia gas in the TMS-oxygen plasma resulted in emission lines dominated by the N 2 and CN species with the suppression of the OH and oxygen-related radicals, thereby introducing nitrogen and carbon atoms in the deposited film. A silicon oxynitride (SiO x N y ) film had the best surface morphology and the lowest residual internal stress was achievable by controlling the reactant gas flow ratio of the ammonia and oxygen. The barrier property to the water vapor permeation of the silicon oxide film (~1.65 g/m 2 /day) deposited onto the polyethylene terephthalate (PET) substrate was thus greatly improved to 0.06 g/m 2 /day for the film synthesized from an adequate TMS-oxygen-ammonia gas mixture.

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Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Liu

Chen

et al. 2017

Applied Sciences

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“…Related to the study of the dissociation process of TEOS molecules in the TEOS‐O 2 plasma discharge, there are two mechanisms for TEOS molecule dissociation. TEOS can be dissociated both by electron impact and oxidation mechanisms to form a close to pure SiO 2 film based on the following equations:

S i {(O {normalC}_{2} {normalH}_{5})}_{normaln} {(O H)}_{4 - n} + e \to S i {(O {normalC}_{2} {normalH}_{5})}_{n - 1} {(O H)}_{4 - n + 1} + {normalC}_{2} {normalH}_{4} + e

S i {(O {normalC}_{2} {normalH}_{5})}_{normaln} {(O H)}_{4 - n} + O \to S {(O {normalC}_{2} {normalH}_{5})}_{n - 1} {(O H)}_{4 - n + 1} + {normalC}_{2} {normalH}_{4} O + e

…”

Section: Resultsmentioning

confidence: 99%

“…Besides, siloxane layer with excellent hardness, optical, and dielectric properties, provides a variety of applications for optics and microelectronics . AP‐PECVD is able to produce high quality Si‐containing films with high deposition rate and good properties at low temperate, which has great potential for industrial applications . In this work, AP‐DBD is employed to improve the insulation performance of high‐voltage cables by siloxane thin film deposition.…”

Section: Introductionmentioning

confidence: 99%

Thin insulating film deposition on copper by atmospheric‐pressure plasmas

Zhang

Ren

et al. 2017

Plasma Processes & Polymers

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Long‐time partial discharge (PD) is regarded as one of the main reasons for the insulation failure of high‐voltage cables. In this work, we report on the application of atmospheric pressure plasma to deposit siloxane film on copper to avoid PDs. The dielectric barrier discharge (DBD) plasma is driven by AC power supply, with tetraethoxysilane (TEOS), argon, and oxygen mixture as the source gas. The effect of oxygen gas flow rate on the thin film surface morphology, chemical composition, and electrical properties is studied systematically. Our results show that the stability of the plasma deteriorated, when the oxygen flow rate exceeded 10 sccm. The addition of oxygen in the source gas induced a high oxidation level of deposited thin film. The chemical composition of thin film was in the form of SiOx (x = 1.9) with 10 sccm oxygen compared to SiOx (x = 1.2), when deposited in the absence of oxygen. Additionally, the optimal thin film with good stability was obtained with the surface resistivity 1.1 × 1011 Ω, when deposited in the absence of oxygen. The corresponding relative permittivity of the deposited thin film is 2.9. The simulation results demonstrated that the electric field distortion was weaken after the film deposition, which reduced the probability of PD to occur.

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A Scalable, High‐Throughput, and Environmentally Benign Approach to Polymer Dielectrics Exhibiting Significantly Improved Capacitive Performance at High Temperatures

et al. 2018

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Dielectric capacitors are the key components in advanced electronics and electrical systems owing to their highest power density among the electrical energy devices. [1][2][3][4][5][6][7] While ceramic dielectrics are of large dielectric constants and high thermal stability, [8][9][10][11][12] polymer dielectrics possess high tolerance to voltage, great reliability, scalability, and light weight, and therefore are preferred for high-energy-density high-power film capacitors. [13][14][15][16][17] However, the current polymer dielectrics are unable to match the temperature requirements of the emerging applications of electrical energy storage and conversion in harsh environments [18][19][20][21][22] because of their inherently poor thermal stability. For example, while the near-engine-temperature in electric vehicles can reach to above 120 °C, [23] the operating temperature of biaxially oriented polypropylene (BOPP), which is the best commercially available polymer dielectric and currently used in power inverters of electric vehicles, is below 105 °C. [24] The wide bandgap semiconductors like silicon carbide (SiC) and gallium nitride that are well positioned to replace traditional silicon power devices boost the operating temperatures of next-generation capacitors beyond 150 °C. [19] To address these urging needs, a variety of engineering polymers with high thermal stability, such as polyimides (PIs) and fluorene polyesters (FPEs), have been exploited as high-temperature dielectric materials. [20,25] Unfortunately, all the polymers show poor charge-discharge efficiencies under elevated temperatures and high applied fields, [26] which is due to sharply increased electrical conduction attributable to various temperature-and field-dependent conduction mechanisms, e.g., charge injection at the electrode/dielectric interface. [27,28] Ceramic dielectrics are relatively insensitive to temperature and able to maintain the energy-storage performance throughout a broad temperature range, [8][9][10][11][12] but they still suffer from considerable energy loss under high electric fields and elevated temperatures. [29] More recently, the addition of 2D wide bandgap nanostructures such as boron nitride nanosheets (BNNSs) into the polymer has been demonstrated to effectively reduce the conduction loss and largely improve the charge-discharge High-temperature capability is critical for polymer dielectrics in the nextgeneration capacitors demanded in harsh-environment electronics and electrical-power applications. It is well recognized that the energy-storage capabilities of dielectrics are degraded drastically with increasing temperature due to the exponential increase of conduction loss. Here, a general and scalable method to enable significant improvement of the high-temperature capacitive performance of the current polymer dielectrics is reported. The high-temperature capacitive properties in terms of discharged energy density and the charge-discharge efficiency of the polymer films coated with SiO 2 via plasma-enhanced chemical...

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The effect of TEOS plasma parameters on the silicon dioxide deposition mechanisms

Cited by 49 publications

References 27 publications

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Impact on the Gas Barrier Property of Silicon Oxide Films Prepared by Tetramethylsilane-Based PECVD Incorporating with Ammonia

Thin insulating film deposition on copper by atmospheric‐pressure plasmas

A Scalable, High‐Throughput, and Environmentally Benign Approach to Polymer Dielectrics Exhibiting Significantly Improved Capacitive Performance at High Temperatures

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