The effect of the crystal anisotropy on the energy of the dislocation-impurity atmosphere elastic interaction in silicon

Abstract

The energy of the system: straight dislocation—impurity atmosphere, is investigated within the framework of the linear anisotropic theory of elasticity. A numerical calculation is performed for the edge dislocations oriented along the directions 〈110〉 and 〈112〉, with the Burgers vectors 1/2〈110〉 and 1/3〈111〉, and for impurity atoms presented oas point spherical defects in Si. It is shown that for certain impurities and temperatures of the atmsphere formation, there exist some critical impurity concentrations separating the domains where the preferable orientation of the dislocation line is along the direction 〈112〉, from that where the preferable direction is 〈110〉.