The effect of the dynamic adsorption mode on impedance of composite structures with porous silicon

Karlach, A. Yu .; Kuznetsov, G. V.; Litvinenko, S. V.; Milovanov, Y.S.; Skryshevsky, V. A.

doi:10.1134/s1063782610100179

Cited by 14 publications

(11 citation statements)

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“…Impedance spectroscopy is a powerful technique that provides important information regarding the processes of charge transfer in the experimental structures [ 37 , 38 ]. By means of impedance spectroscopy, it was found that experimental samples show a decrease in electrical capacitance and internal resistance with increase of the frequency (Fig.…”

Section: Resultsmentioning

confidence: 99%

Effect of Graphene Oxide on the Properties of Porous Silicon

et al. 2016

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We studied an effect of the graphene oxide (GO) layer on the optical and electrical properties of porous silicon (PS) in hybrid PS–GO structure created by electrochemical etching of silicon wafer and deposition of GO from water dispersion on PS. With the help of scanning electron microscopy (SEM), atomic-force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy, it was established that GO formed a thin film on the PS surface and is partly embedded in the pores of PS. A comparative analysis of the FTIR spectra for the PS and PS–GO structures confirms the passivation of the PS surface by the GO film. This film has a sufficient transparency for excitation and emission of photoluminescence (PL). Moreover, GO modifies PL spectrum of PS, shifting the PL maximum by 25 nm towards lower energies. GO deposition on the surface of the porous silicon leads to the change in the electrical parameters of PS in AC and DC modes. By means of current–voltage characteristics (CVC) and impedance spectroscopy, it is shown that the impact of GO on electrical characteristics of PS manifests in reduced capacitance and lower internal resistance of hybrid structures.

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Section: Resultsmentioning

confidence: 99%

Effect of Graphene Oxide on the Properties of Porous Silicon

et al. 2016

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“…The reason for the observed hysteresis can be non-equilibrium filling of surface states in PS, which exchange electrons with the semiconductor [36]. Impedance spectroscopy is a powerful technique that provides important information regarding the processes of charge transfer in the experimental structures [37,38]. By means of impedance spectroscopy, it was found that experimental samples show a decrease in electrical capacitance and internal resistance with increase of the frequency (Fig.…”

Section: Investigation Of the Electrical Properties Of The Ps-go Strumentioning

confidence: 99%

“…7b). After replacing the capacitor by this element, the expression for the impedance of the structures based on PS will be the following [38]:…”

Section: Investigation Of the Electrical Properties Of The Ps-go Strumentioning

confidence: 99%

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Effect of Graphene Oxide on the Properties of Porous Silicon

Olenych¹,

Aksimentyeva²,

Monastyrskii³

et al. 2017

Nano Online

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We studied an effect of the graphene oxide (GO) layer on the optical and electrical properties of porous silicon (PS) in hybrid PS-GO structure created by electrochemical etching of silicon wafer and deposition of GO from water dispersion on PS. With the help of scanning electron microscopy (SEM), atomic-force microscopy (AFM), and Fourier transform infrared (FTIR) spectroscopy, it was established that GO formed a thin film on the PS surface and is partly embedded in the pores of PS. A comparative analysis of the FTIR spectra for the PS and PS-GO structures confirms the passivation of the PS surface by the GO film. This film has a sufficient transparency for excitation and emission of photoluminescence (PL). Moreover, GO modifies PL spectrum of PS, shifting the PL maximum by 25 nm towards lower energies. GO deposition on the surface of the porous silicon leads to the change in the electrical parameters of PS in AC and DC modes. By means of current-voltage characteristics (CVC) and impedance spectroscopy, it is shown that the impact of GO on electrical characteristics of PS manifests in reduced capacitance and lower internal resistance of hybrid structures.

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“…As a rule, in fine‐grained ceramic materials, the resistivity (per unit length) of crystallite boundaries is much higher than that of the crystallite bulk. However, sometimes there is a reverse ratio since grain boundaries can be thinner by several orders of magnitude than the grains themselves .…”

Section: Resultsmentioning

confidence: 99%

Impedance spectroscopy of single graphene layer at gas adsorption

Skryshevsky

Milovanov

Gavrilchenko

et al. 2015

Phys. Status Solidi A

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Impedance spectroscopy and micro‐Raman spectroscopy were applied for analysis of single graphene layer. Despite that Raman spectra showed the high quality of studied layers (ratio of intensities of the D and G peaks ID/IG is better than <0.01), two semicircles on the Nyquist curve of the Ni–graphene–Ni structure suggest the existence of inhomogeneous regions. Exposure in ethanol and acetone vapors by different degrees affects the reactive and active resistance of graphene film. Moreover, the dynamic response behavior of impedance differs in the vapor of ethanol, acetone, and phenol. It ensures that impedance spectroscopy of graphene is a useful tool for detection of different gases.

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The effect of the dynamic adsorption mode on impedance of composite structures with porous silicon

Cited by 14 publications

References 11 publications

Effect of Graphene Oxide on the Properties of Porous Silicon

Effect of Graphene Oxide on the Properties of Porous Silicon

Effect of Graphene Oxide on the Properties of Porous Silicon

Impedance spectroscopy of single graphene layer at gas adsorption

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