2012
DOI: 10.1016/j.jcrysgro.2012.08.028
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The effect of the growth rate on the microstructure of multi-crystalline silicon

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Cited by 23 publications
(6 citation statements)
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“…Therefore, the pores structure of sample prepared at -15 °C arose because of the faster nucleation of benzene crystals at this low temperature, which meant that smaller benzene crystals formed. 21,22 By altering graphite concentrations, cryogels C0−C2, containing 0 w/w % to 2 w/w % graphite, were successfully created. Figure 2 shows the differences between these samples.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Therefore, the pores structure of sample prepared at -15 °C arose because of the faster nucleation of benzene crystals at this low temperature, which meant that smaller benzene crystals formed. 21,22 By altering graphite concentrations, cryogels C0−C2, containing 0 w/w % to 2 w/w % graphite, were successfully created. Figure 2 shows the differences between these samples.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…The gel prepared at -15 °C had more but smaller pores (about 20μm).According to nucleation theory, a higher nucleation rate decreases the size of nuclei. Therefore, the pores structure of sample prepared at -15 °C arose because of the faster nucleation of benzene crystals at this low temperature, which meant that smaller benzene crystals formed. , …”
Section: Resultsmentioning
confidence: 99%
“…The hetero-structures based on thin films with similar crystallization systems and values of the crystallites' sizes indicate a good interfacial lattice compatibility, effective during the early steps of the deposition processes, and allow a uniform growth of the top layer on the entire surface [32,33]. The crystallite sizes were calculated based on the Scherrer formula, Eq.…”
Section: Crystalline Structure and Morphologymentioning
confidence: 99%
“…In mc-Si, most of dislocations nucleate at grain boundaries [55,56] or generate from particles, such as SiC and Si 3 N 4 [57], due to the lattice distorted stress concentration around them. In mc-Si, most of dislocations nucleate at grain boundaries [55,56] or generate from particles, such as SiC and Si 3 N 4 [57], due to the lattice distorted stress concentration around them.…”
Section: Dislocations and Their Clustersmentioning
confidence: 99%