The effect of the interfacial states by swift heavy ion induced atomic migration in 4H-SiC Schottky barrier diodes

Yang, Zhimei; Lan, Fan; Li, Yun; Gong, Ming; Huang, Mingmin; Gao, Bo; Hu, Junkui; Ma, Yao

doi:10.1016/j.nimb.2018.09.024

Cited by 11 publications

(2 citation statements)

References 22 publications

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“…This rebound confirms the enhancement of electric polarization caused by irradiation. The irradiationinduced decrease in SBH is mainly due to changes in interfacial states [11,36]. However, during C-V measurement, the interstitials in the shallow layer of the epitaxial layer (depletion region) induce negative image charges in the metal layer, generating an additional electric field strength ∆E.…”

Section: Resultsmentioning

confidence: 99%

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

Tian

et al. 2023

J. Phys. D: Appl. Phys.

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The effects of electric polarization and defect energy levels induced by C4+ irradiation on the electrical behavior of 4H-SiC Schottky Barrier Diodes (SBDs) are discussed. The parameters of the SBDs were extracted from capacitance-voltage (C-V) and current-voltage (I-V) measurements, the deep level transient spectroscopy (DLTS) was used to identify defect energy levels. In addition, the dielectric function and energy band structure of 4H-SiC were calculated using the first-principles approach to verify the enhancement of polarization and the origin of the defect energy levels. The results show that the net (donor) carrier concentration (Nd) increases with the increase of irradiation fluence, which is caused by the competition between irradiation-induced defects and the polarization effect. On the one hand, Z1/2 is determined by DLTS. It is related to the doubly negatively (2-|0) charged state of Vc (carbon vacancy), which is a double acceptor. The intensity of the Z1/2 peak increases with increasing irradiation fluence, which means that the defects caused by irradiation should reduce the Nd. On the other hand, the polarization effect does exist and it becomes stronger with the increase of the irradiation fluence, which makes the Nd increases. Obviously, the polarization effect induced by the irradiation is dominant for Nd when the depth of ion penetration is in the shallow layer behind the metal-semiconductor (M-S) interface. Irradiation induced electron traps and an uneven distribution of positively charged centers, which can cause ln(I)-V to exhibit a non-linear component before reaching the turn-on voltage. The series resistance (Rs), reverse current (IR) increases and the forward current decreases with the increase of irradiation fluence. All those show that the irradiation cause degradation of Ni/4H-SiC SBD performance.

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Section: Resultsmentioning

confidence: 99%

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

Tian

et al. 2023

J. Phys. D: Appl. Phys.

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“…and deep level defects, etc. [7][8][9][10][11][12][13][14][15], which will inevitably have a serious impact on the performance of 4H-SiC power devices and ultraviolet photodetectors. Among the morphological defects, micropipes have serious impact on the device performance but are preventable, since the substrates with micropipe density less than 0.1 cm −2 are commercially available [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Meng

et al. 2020

Micromachines

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In this paper, the chemical vapor deposition (CVD) processing for 4H-SiC epilayer is investigated with particular emphasis on the defects and the noise properties. It is experimentally found that the process parameters of C/Si ratio strongly affect the surface roughness of epilayers and the density of triangular defects (TDs), while no direct correlation between the C/Si ratio and the deep level defect Z1/2 could be confirmed. By adjusting the C/Si ratio, a decrease of several orders of magnitudes in the noise level for the 4H-SiC Schottky barrier diodes (SBDs) could be achieved attributing to the improved epilayer quality with low TD density and low surface roughness. The work should provide a helpful clue for further improving the device performance of both the 4H-SiC SBDs and the Schottky barrier ultraviolet photodetectors fabricated on commercial 4H-SiC wafers.

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Effects of low fluence 212 MeV Ge swift heavy ion irradiation on the structural and optical properties of β-Ga2O3 epitaxial layers

Yu,

Guo,

et al. 2024

Journal of Alloys and Compounds

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The effect of the interfacial states by swift heavy ion induced atomic migration in 4H-SiC Schottky barrier diodes

Cited by 11 publications

References 22 publications

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Effects of low fluence 212 MeV Ge swift heavy ion irradiation on the structural and optical properties of β-Ga2O3 epitaxial layers

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The effect of the interfacial states by swift heavy ion induced atomic migration in 4H-SiC Schottky barrier diodes

Cited by 11 publications

References 22 publications

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

Effects of electric polarization and defect energy levels induced by ion irradiation on the electrical behavior of 4H-SiC Schottky barrier diodes

Effect of Various Defects on 4H-SiC Schottky Diode Performance and Its Relation to Epitaxial Growth Conditions

Effects of low fluence 212 MeV Ge swift heavy ion irradiation on the structural and optical properties of β-Ga2O3 epitaxial layers

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Effects of low fluence 212 MeV Ge swift heavy ion irradiation on the structural and optical properties of β-Ga2O3 epitaxial layers