The effect of the surface energy and structure of the SiC substrate on epitaxial graphene growth

Abstract

The theoretical calculations and experiments were employed to study the effect of the exposed SiC surface on epitaxial graphene growth.

Induced growth of quasi-free-standing graphene on SiC substrates

“…5(d). These results indicate that the buffer layer appears in sample B rather than sample A4, 32,33 which is also in line with the XPS results.…”

Graphene/Cu composites: Electronic and mechanical properties by first-principles calculation

“…Where is the unstable stacking fault energy, s is the surface energy can be calculated as below [47]:…”

Facet-Dependent Control of PbI2 Colloids for over 20% Efficient Perovskite Solar Cells

“…The Wulff’s theorem notes that the thermodynamically controlled crystal growth process tends to minimize the total surface free energy of the crystal; therefore, the growth rate of a certain facet is proportional to its surface free energy per unit area (eV/Å 2 ) . This means that the facet with higher surface energy possesses a faster growth rate, which would cause the gradual disappearance of this facet during the growth procedure, leading to the reduced proportion of this facet in the final crystal . It has been well-established that the presence of a capping agent can preferentially interact with a specific facet of a crystal, and the order of the surface energies of different facets could also be changed. , In our case, because the increased AA concentration is observed to lead to morphology variation of the PbI 2 crystal, it is reasonable to hypothesize that the hydrogen (H) atom might function as a capping agent and change the surface energy of the PbI 2 crystal.…”