The Effect of Thermal Annealing and Pulse Laser Annealing in the Reduction of Graphene Oxide

Abstract

The discovery of Graphene and its unique properties has attracted great interest. Unfortunately, the synthesis of graphene in large scale is challenging, for this reason the derivative of graphene such as graphene oxide (GO) and reduce graphene oxide (rGO) have become alternative sources. The reduction of graphene oxide is an alternative route to obtain graphene-like behavior. This study is aim at examining the similarities and difference between thermal reduction technique and pulse laser method of reduction of (GO). The method utilizes a pulse laser beam for reduction of GO layers on glass substrates and thermal reduction technique. Using the pulse laser method, conductivity of reduced GO was found to be 2.325E-2(1/ohm) which is six times higher than conductivity values reported for GO layers reduced by thermal means at 400oC which was 3.740E-3(1/ohm). A higher transmittance was observed for the pulse laser annealed which holds promising application in a lot technological research. The scanning electron microscope (SEM) result reveals the evenly distribution of the GO around the substrate. The non-thermal nature of the pulse laser method combined with its simplicity and scalability, makes it very attractive for the future manufacturing of large-volume graphene-based optoelectronics