2005
DOI: 10.1134/1.2061739
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The Effect of Treatment in a Pulsed Magnetic Field on the Kinetics of Oxidation of Indium Phosphide Crystals

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Cited by 9 publications
(7 citation statements)
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“…This method of physical action is of interest and promising from scientific point of view as well as important practically [1][2][3][4]. The energy absorbed as a result of treatment in such magnetic fields is three orders of magnitude smaller than the thermal energy of electrons at room temperature, which complicates the explanation of the observed effects.…”
Section: Introductionmentioning
confidence: 99%
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“…This method of physical action is of interest and promising from scientific point of view as well as important practically [1][2][3][4]. The energy absorbed as a result of treatment in such magnetic fields is three orders of magnitude smaller than the thermal energy of electrons at room temperature, which complicates the explanation of the observed effects.…”
Section: Introductionmentioning
confidence: 99%
“…However, even this energy action can cause both reversible and irreversible changes in the defect subsystems of solids [1]. Despite numerous investigations in this field and some proposed explanations, the problem of WMF interaction with practically important III-V semiconductors still remains open [3]. Therefore, search for new effects related to the WMF treatment of substances (in particular, semiconductors) is urgent.…”
Section: Introductionmentioning
confidence: 99%
“…So weak MF treatment can lead to changing of the electronic structure of the surface and appearance of charged defects, thus resulting in modification of the luminescence spectra. Moreover, according to [11][12][13], these changes in the PL spectra should be long-term and nonmonotonic.…”
Section: Resultsmentioning
confidence: 99%
“…On the other hand, MF-stimulated oxidation can be a factor influencing the PL bands [12]. This can change the elastically-strained state of the GaN surface region.…”
Section: Resultsmentioning
confidence: 99%
“…The amount of publications devoted to the study of MF induced effects in silicon and Si-SiO 2 structures is small [3][4][5][6]. And the question about the effect of perspective weak pulsing MFs [7][8][9] on the modification of physical properties of practically important III-V semiconductors still remains open.…”
Section: Introduction © 2010 V Lashkaryov Institute Of Semiconductomentioning
confidence: 99%