The effect of varying temperature and O2 flow rate in ex situ annealed tin-doped indium for fabrication of commercial grade indium tin oxide

Abstract

In this work, tin-doped indium was deposited on a glass substrate via the electron beam evaporation technique. Then, the as-grown thin films were baked in the presence of oxygen at different O 2 flow rates and temperatures inside a furnace to obtain transparent conducting oxide thin film structures. The electrical and optical properties of the layers were investigated, the thickness of all samples was kept at 500 nm and the rate of deposition was set at 0.1 nm min -1 . The best optical and electrical properties were obtained at O 2 flow rate of 1.5 Nl min -1 and temperatures of 500°C where above 90 % optical transparency and B4 9 10 -3 ohm cm -1 electrical resistivity were achieved.

Fabrication of highly conductive graphene/ITO transparent bi-film through CVD and organic additives-free sol-gel techniques

“…The optical band gap (E g ) can be determined by using the plot of (αhν) 2 versus hν, where α is the absorption coefficient, hν is the incident photon energy, and α can be calculated as follows: 7 , 63 , 64 where, d is the thickness of the film, and T is the optical transmittance. Further, E g is related to α and hν as described in Tauc’s relationship, as follows: 7 , 16 , 63 , 65 …”