The Effect on the Optical Absorption Coefficients due to the Positions in the Plane of Square GaAs / Al(GaAs) Quantum Well Wire under the Laser Field

Abstract

The laser field effects on the electronic and optical properties depending on two different positions in the plane of GaAs/Al (GaAs) quantum wire with square cross sections have been investigated. The electron energy levels and the electronic wave functions of the wires are calculated using the finite differences method within the effective mass approximation. The differences of the total absorption coefficients and the reflection index changes sourced from the cross-sectional shape were determined and explained with and without laser field. From the results the blue shift and red shift effects on the total absorption coefficients and the reflection index changes were identified depending on the laser field strength and the positions of square GaAs/Al(GaAs) quantum well wire in the plane.

HARİCİ ELEKTRİK ALANI ETKİSİ ALTINDA 〖Ga〗_(1-x) 〖Al〗_x As/GaAs KUANTUM KUYU TEL ÖRGÜSÜNDEKİ ENERJİ DURUMLARI

“…To explain the interestingness in these energy changes, probability distributions of states at certain electric field values are plotted. When we look at other studies in the literature, it is seen that the geometry of the structure is as important as the external field applied to semiconductor materials [17,18,21].…”