The effects of a combined thermal treatment of substrate heating and post‐annealing on the microstructure of InGaZnO films and the device performance of their thin film transistors

Moon, Miri; Na, Sekwon; Jeon, Haseok; Lee, Tae Hun; Jung, Donggeun; Kim, Hyoungsub; Yang, Jun‐Mo; Lee, Hoo-Jeong

doi:10.1002/sia.4968

Cited by 5 publications

(2 citation statements)

References 13 publications

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“…Many reports have announced that the annealing process is dispensable for improving the electrical property of various FETs using original IV semiconductors [29], oxide semiconductors [30,31], layered semiconductors [32-34], etc. In the case of 4H-SiC included in the original IV, the annealing process created a passivation layer at the interface, and device parameters were improved, such as the electron mobility and subthreshold swing (SS).…”

Section: Introductionmentioning

confidence: 99%

Influence of post-annealing on the off current of MoS2 field-effect transistors

et al. 2015

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Two-dimensional materials have recently been spotlighted, due to their unique properties in comparison with conventional bulk and thin-film materials. Among those materials, MoS2 is one of the promising candidates for the active layer of electronic devices because it shows high electron mobility and pristine band gap. In this paper, we focus on the evolution of the electrical property of the MoS2 field-effect transistor (FET) as a function of post-annealing temperature. The results indicate that the off current drastically decreased at 200°C and increased at 400°C while other factors, such as the mobility and threshold voltage, show little variation. We consider that the decreasing off current comes from the rearrangement of the MoS2 film and the elimination of the surface residue. Then, the increasing off current was caused by the change of the material's composition and adsorption of H2O and O2.Electronic supplementary materialThe online version of this article (doi:10.1186/s11671-015-0773-y) contains supplementary material, which is available to authorized users.

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Section: Introductionmentioning

confidence: 99%

Influence of post-annealing on the off current of MoS2 field-effect transistors

et al. 2015

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“…If we could reduce the trap density of electron and improve the atomic arrangement, we could increase the carrier concentration. Therefore, the increase of carrier concentration by post-annealing is closely associated with improvement of atomic arrangement 29) . From these results, it is concluded that as the annealing temperature increased to 600 o C, the electrical properties was improved, but at 700 o C, a considerable diffusion occurred, leading to the structural rearrangement.…”

Section: Resultsmentioning

confidence: 99%

Diffusion Behaviors and Electrical Properties in the In-Ga-Zn-O Thin Film Deposited by Radio-frequency Reactive Magnetron Sputtering

Lee¹,

Choi²,

Lee³

2015

Journal of the Korean institute of surface engineering

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We investigated the diffusion behaviors, electrical properties, microstructures, and composition of In-GaZn-O (IGZO) oxide thin films deposited by radio frequency reactive magnetron sputtering with increasing annealing temperatures. The samples were deposited at room temperature and then annealed at 300, 400, 500, 600 and 700 o C in air ambient for 2 h. According to the results of time-of-flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy, no diffusion of In, Ga, and Zn components were observed at 300, 400, 500, 600 o C, but there was a diffusion at 700 o C. However, for the sample annealed at 700 o C, considerable diffusion occurred. Especially, the concentration of In and Ga components were similar at the IGZO thin film but were decreased near the interface between the IGZO and glass substrate, while the concentration of Zn was decreased at the IGZO thin film and some Zn were partially diffused into the glass substrate. The high-resolution transmission electron microscopy results showed that a phase change at the interface between IGZO film and glass substrate began to occur at 500 o C and an unidentified crystalline phase was observed at the interface between IGZO film and glass substrate due to a rapid change in composition of In, Ga and Zn at 700

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