Electronleakage currents seriously limit the power conversion efficiencies (PCEs) of gallium nitride (GaN)-based laser diodes (LDs). To minimize the leakage currents, electron blocking layers (EBLs) are generally applied in the p-type region. However, few works have discussed the electron blocking effect of a p-cladding layer, which is found to be critical in suppressing the leakage currents of an LD. In this work, we compare the blocking performance of single AlGaN p-cladding layers and AlGaN/GaN superlattice (SL) p-cladding layers with the same average Al component respectively. Both light-emitting diodes (LEDs) and LDs with the same epitaxy structures are fabricated. Light-current (L-I) curves and current-voltage (I-V) curves are measured. The latest analytical model of leakage currents is applied to fit the L-I curves of LEDs. Smaller leakage coefficients are observed for the SL structures than the single-layer structures. 80 LDs with different ridge widths are characterized, whose threshold current density, slope efficiencies (SEs), and PCEs are compared. Statistically significant advantages of an SL-based p-cladding layer are demonstrated compared to a single AlGaN layer. The blocking effects of both scattering- and bound-state electrons by SL are investigated. Continuous reflection and thermal relaxation are responsible for the blocking effect of scattering-state electrons. By simulation, the tunneling effect of bound-state electrons through a miniband mechanism is found to be insignificant at a large injection level due to a negative differential conductivity by the Esaki-Tsu effect. We demonstrate a better electron blocking performance of p-cladding layers based on SLs than single AlGaN layers in GaN-based LDs.