The effects of illumination on the current conduction mechanisms of the Au/C₂₀H₁₂/n-Si Schottky barrier diode (SBD)

Abstract

Using the I-V characteristics both in the dark and under varied illumination-intensities (50–250 mW.cm−2) by 50 mW.cm−2 steps in the wide range bias-voltage (±5 V), specific fundamental electrical and photo effects parameters of the Au/C20H12/n-Si SBD were examined. Due to the creation of electron–hole pairs and their drift in opposite directions under the influence of an electric field, the value of photocurrent in the reverse bias (Iph) increases when illumination density is increased. The barrier height (ΦB0) tended to decrease due to the increase in photocurrent, while the diode’s ideality factor (n) increased with increasing illumination intensity. Also, the Schottky structure’s open-circuit voltage (Voc), short circuit current (Isc), filling factor (FF), and efficiency (η) were determined to be 0.358 V, 95.5 μA, 33%, and 0.028% under 50 mW.cm−2, respectively. The Rs and Rsh values found using Ohm’s law are a vital function of illumination and voltage which decrease with increasing illumination intensity. Additionally, using the forward bias I-V data and accounting for the bias dependent of the effective barrier height (Φe) and ideality factor n(V) for different illumination intensities, the energy density distribution profile of surface states (Nss) was obtained. According to these results, the organic interlayer consisting of C20H12 is light-sensitive and suitable for optoelectronic devices such as photodetectors and photodiodes.

Influence of highly optimized charge carrier mobility and diverse physical features toward efficient organic solar cells

“…Consequently, an increase in P in indicates a larger V OC , which can be attributed to a greater number of charge carriers near the device junction, or to their blockage near the junction. Furthermore, when P in increases, so does R SH , which is important for carrier accumulation at the interface [31]. The total η of OSC increases with increased light intensity as illustrated in figures 7(c) & (d).…”

“…If the leakage current has a higher value than the dark current, it has a substantial effect on the light current and causes sharp drops in V OC and J SC . Although the difference between the photocurrent and leakage current is primarily the light current, at lower light levels, the leakage current approaches its peak [31]. This paper will now present a model for the effects of absorber thickness, charge carrier mobility ratios, trap-state densities, blend P 3 HT with four different fullerene derivatives, interlayer contact, light intensities, and T on OSC device performance characteristics.…”

Smart alloy metalized novel photonic NEMS photodiode with CuAlV/n-Si/Al junction structure

“…When the light hits on the photodiode, the new photogenerated extra free charge carriers (electron-hole pairs) occurred in the device pass over the barrier height. The drift of these carriers in opposite directions under the influence of an electric field either can increase the current (photocurrent) in the reverse region (thus the ideality factor increases and barrier height decreases) [55,56] or can decrease the reverse current (thus decreases the ideality factor and increases the barrier height) [57] depending on the illumination, localized states, recombination types and the device [58].…”