The effects of indium aggregation in InGaN/GaN single and multiple quantum wells grown on nitrogen-polar GaN templates by a pulsed metalorganic chemical vapor deposition

You, Yu-Siang; Feng, Shih‐Wei; Wang, Hsiang‐Chen; Song, Jie; Han, Jung

doi:10.1016/j.jlumin.2016.10.039

Cited by 9 publications

(2 citation statements)

References 16 publications

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“…Past study shows indium aggregation at / multiple quantum wells resulted in mounds, forming localized states for trapping carriers. Thus; increased indium aggregation could improve luminescence efficiency [18]. When substrate temperature is increased from 500 ℃ to 600 ℃, thin film surface still shows almost homogeneous and granular and nano-structure but with more agglomerations on surface.…”

Section: Xrd Analysismentioning

confidence: 99%

Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature

Mantarcı

2019

Celal Bayar Üniversitesi Fen Bilimleri Dergisi

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Indium Gallium Nitride () thin film was grown on the / − substrate using an RF magnetron sputter under condition of different substrate temperatures. Various experimental measurements were taken to comprehend effects of substrate temperature on the structure of thin film and results were analyzed. Grazing mode of XRD results confirmed that thin film has a hexagonal structure with (002) plane for 500℃ and 600 ℃ substrate temperature. It was seen that structural parameters of thin film show a change with substrate temperature change. Reasons were discussed. Strain and stress values in thin film were calculated from experimental results and it was found that all thin film has compressive stress. Morphological parameters of thin film were measured by AFM and it was understood that these properties are varied by changing substrate temperature. Also, growth mode of some thin film was obtained to be layer-plus-island mode (Stranski-Krastanov growth mode), others was obtained to be layer by layer growth mode (Frank van der Merwe mode). SEM evaluation gives that increasing substrate temperature worsened the surface structure of thin film; it is compatible with and supports XRD results. Compositional values in thin film were found from XPS analysis. In addition to our material, carbon and oxygen have also been obtained from XPS results, as expected. Detailed morphological and structural properties of thin films have been seen to change with changing substrate temperature and we believe this plays an important role in production of based optoelectronic devices.

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Section: Xrd Analysismentioning

confidence: 99%

Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature

Mantarcı

2019

Celal Bayar Üniversitesi Fen Bilimleri Dergisi

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“…4,13 In contrast to continuous growth mode, a pulsed growth mode was applied to the growth of InGaN/GaN MQWs grown on N-polar GaN templates. 13,14 During the pulse growth mode of InGaN/GaN MQWs, triethylgallium (TEGa) and NH 3 precursors are alternately injected into the reactor to alter the surface stoichiometry for facilitating the surface kinetics, while trimethylindium (TMIn) precursor was continuously injected at a constant flow rate. With the pulsed growth mode, InGaN decomposition and indium aggregation lead to InGaN mounds, which accumulate more carriers for recombination and improve luminescence efficiency.…”

mentioning

confidence: 99%

Precursor Duration and Thermal Annealing Effects in InGaN/GaN Multiple Quantum Wells Grown on Nitrogen-Polar GaN Templates by a Pulsed Metallorganic Chemical Vapor Deposition

Feng

You

Huang

et al. 2018

ECS J. Solid State Sci. Technol.

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In this study, the effects of precursor duration and thermal annealing on the material and optical properties of InGaN/GaN multiple quantum wells (MQWs) grown on nitrogen (N)-polar GaN templates by a pulsed metallorganic chemical vapor deposition are investigated. With a 2-sec NH 3 precursor duration, an apparent indium aggregation leads to a higher density and larger size of InGaN mounds for more exciton accumulation, enhancing the radiative recombination and luminescence efficiency. In addition, the more, larger, and brighter light spots in the cathodoluminescence (CL) images and a stronger CL intensity in the annealed sample show that a smaller size and higher density of InGaN mounds enhance the radiative recombination and luminescence efficiency. Both a 2-sec NH 3 precursor duration and 60-sec thermal annealing are beneficial to the growth conditions of InGaN/GaN MQWs grown on N-polar GaN templates. The research results of the pulsed growth mode provide important information to optimize growth conditions of InGaN/GaN MQWs grown on N-polar GaN templates.

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Physical properties of RF magnetron sputtered GaN/n-Si thin film: impacts of RF power

Mantarcı

Kundakçı

2019

Opt Quant Electron

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The effects of indium aggregation in InGaN/GaN single and multiple quantum wells grown on nitrogen-polar GaN templates by a pulsed metalorganic chemical vapor deposition

Cited by 9 publications

References 16 publications

Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature

Detailed Structural and Morphological Characterization of InGaN Thin Films Grown by RF Magnetron Sputtering with Various Substrate Temperature

Precursor Duration and Thermal Annealing Effects in InGaN/GaN Multiple Quantum Wells Grown on Nitrogen-Polar GaN Templates by a Pulsed Metallorganic Chemical Vapor Deposition

Physical properties of RF magnetron sputtered GaN/n-Si thin film: impacts of RF power

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