The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

Ruddy, F.H.; Seidel, John G.

doi:10.1016/j.nimb.2007.04.077

Cited by 47 publications

(20 citation statements)

References 6 publications

(11 reference statements)

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“…The alpha-particle energy resolution of a SiC detector was only slightly affected by cumulative gamma-ray doses up to 22.7 MGy. [5][6] Excellent alpha-particle energy resolution has also been reported. [7][8] Ivanov, et al, [7] reported a FWHM of about 20 keV for alpha particles in the 5.4-5.5 MeV energy range for a SiC detector with a 1000-Å chromium Schottky contact.…”

Section: Introductionmentioning

confidence: 95%

High-resolution alpha spectrometry with a thin-window silicon carbide semiconductor detector

Ruddy¹,

Seidel

Sellin

2009

2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC)

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The potential for high-resolution alpha-particle energy spectrometry in high-temperature, high-radiation environments using thin-window 4H-SiC radiation detectors has been demonstrated. 238Pu alpha-particle peaks separated by only 42.7 keV have been completely resolved using a SiC Schottky detector with a 400 AÃ�Â¿ titanium Schottky contact (entrance window). The observed FWHM for the 238Pu 5499.2-keV alpha particle peak is 20.6 keV or 0.37%. Factors affecting the observed alpha-particle energy resolution in SiC detectors will be discussed

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Section: Introductionmentioning

confidence: 95%

High-resolution alpha spectrometry with a thin-window silicon carbide semiconductor detector

Ruddy¹,

Seidel

Sellin

2009

2009 IEEE Nuclear Science Symposium Conference Record (NSS/MIC)

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“…The detection efficiency is, however, limited primarily by a low thickness of the active region (around 100 m) and by a low linear absorption coefficient, almost identical with silicon detectors. Very good radiation hardness was acquired in a study 7 in which detectors were exposed to gamma radiation produced by 137 Cs with doses up to 5.5 MGy, and no significant deterioration in detection of -particles emitted by 238 Pu radioisotope was observed. In addition, our previous work 8 showed only a weak deterioration of the detected gamma spectrum from 241 Am after fast neutrons and gamma irradiation.…”

Section: Introductionmentioning

confidence: 99%

Detection of fast neutrons from D–T nuclear reaction using a 4H–SiC radiation detector

Затько

Šagátová

Sedlačková

et al. 2016

Int. J. Mod. Phys. Conf. Ser.

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The particle detector based on a high purity epitaxial layer of 4H-SiC exhibits promising properties in detection of various types of ionizing radiation. Due to the wide band gap of 4H-SiC semiconductor material, the detector can reliably operate at room and also elevated temperatures. In this work we focused on detection of fast neutrons generated the by D-T (deuterium-tritium) nuclear reaction. The epitaxial layer with a thickness of 105 m was used as a detection part. B. Zatko et al. 1660235-2A circular Schottky contact of a Au/Ni double layer was evaporated on both sides of the detector material. The detector structure was characterized by current-voltage and capacitance-voltage measurements, at first. The results show very low current density (<0.1 nA/cm 2 ) at room temperature and good homogeneity of free carrier concentration in the investigated depth. The fabricated detectors were tested for detection of fast neutrons generated by the D-T reaction. The energies of detected fast neutrons varied from 16.0 MeV to 18.3 MeV according to the acceleration potential of deuterons, which increased from 600 kV up to 2 MV. Detection of fast neutrons in the SiC detector is caused by the elastic and inelastic scattering on the silicon or carbide component of the detector material. Another possibility that increases the detection efficiency is the use of a conversion layer. In our measurements, we glued a HDPE (high density polyethylene) conversion layer on the detector Schottky contact to transform fast neutrons to protons. Hydrogen atoms contained in the conversion layer have a high probability of interaction with neutrons through elastic scattering. Secondary generated protons flying to the detector can be easily detected. The detection properties of detectors with and without the HDPE conversion layer were compared.

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“…The potential of SiC detectors to withstand high temperatures up to 700°C and high dose rates when irradiated by electrons, alpha particles, light ions, neutrons and gamma-rays have been reported. [1][2][3][4][5][6][7] SiC detectors are being developed for high-energy charged particle, UV, X-ray, gamma-ray and neutron spectrometry. The spectroscopic performance of the SiC detectors based on high purity epitaxial material is, however, limited by the achievable thickness of the depletion region.…”

Section: Introductionmentioning

confidence: 99%

MCNPX simulations of the silicon carbide semiconductor detector response to fast neutrons from D–T nuclear reaction

Sedlačková

Šagátová

Затько

et al. 2016

Int. J. Mod. Phys. Conf. Ser.

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Silicon Carbide (SiC) has been long recognized as a suitable semiconductor material for use in nuclear radiation detectors of high-energy charged particles, gamma rays, X-rays and neutrons. The nuclear interactions occurring in the semiconductor are complex and can be quantified using a Monte Carlo-based computer code. In this work, the MCNPX (Monte Carlo N-Particle eXtended) code was employed to support detector design and analysis. MCNPX is widely used to simulate interaction of radiation with matter and supports the transport of 34 particle types including heavy ions in broad energy ranges. The code also supports complex 3D geometries and both nuclear data tables and physics models. In our model, monoenergetic neutrons from D-T nuclear reaction were assumed as a source of fast neutrons. Their energy varied between 16 and 18.2 MeV, according to the accelerating voltage of the deuterons participating in D-T reaction. First, the simulations were used to calculate the optimum thickness of the reactive film composed of High Density PolyEthylene (HDPE), which converts neutral particles to charged particles and thusly enhancing detection efficiency. The dependency of the optimal thickness of the HDPE layer on the energy of Int. J. Mod. Phys. Conf. Ser. 2016.44. Downloaded from www.worldscientific.com by 158.106.208.226 on 09/01/18. Re-use and distribution is strictly not permitted, except for Open Access articles. K. Sedlačková et al.1660226-2 the incident neutrons has been shown for the inspected energy range. Further, from the energy deposited by secondary charged particles and recoiled ions, the detector response was modeled and the effect of the conversion layer on detector response was demonstrated. The results from the simulations were compared with experimental data obtained for a detector covered by a 600 and 1300 m thick conversion layer. Some limitations of the simulations using MCNPX code are also discussed.

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The effects of intense gamma-irradiation on the alpha-particle response of silicon carbide semiconductor radiation detectors

Cited by 47 publications

References 6 publications

High-resolution alpha spectrometry with a thin-window silicon carbide semiconductor detector

High-resolution alpha spectrometry with a thin-window silicon carbide semiconductor detector

Detection of fast neutrons from D–T nuclear reaction using a 4H–SiC radiation detector

MCNPX simulations of the silicon carbide semiconductor detector response to fast neutrons from D–T nuclear reaction

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