The effects of interdiffusion on the subbands in GaxIn1−xN0.04As0.96/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths

Abstract

Articles you may be interested inPhotoreflectance investigations of quantum well intermixing processes in compressively strained In Ga As P ∕ In Ga As P quantum well laser structures emitting at 1.55 μ m

The effects of quantum well numbers and thermal annealing on optical properties of GaInNAs/GaAs quantum well structures

“…In addition, the blue-shift could also arise from changes in quantum well profile as a result of the interdiffusion of In-Ga atoms. Thermal annealing causes the potential well to be smoothed to a parabolic-like well, hence the effective band gap energy of QW blue-shifts [8]. It can be concluded using the PL results that the intense and narrow optical signal has been observed in as-grown 3 QWs and the most pronounced improvement has been obtained in 7 QWs sample after the thermal annealing.…”

Effect of indium distribution on optical properties in InGaAs/GaAs quantum wells

“…In addition, interdiffusion is also important in tuning the emission wavelength used in standard dense wavelength division multiplexed (DWDM) optical communication systems [3]. Figure 2 shows the In concentration profiles of In 0.25 Ga 0.75 As/GaAs QW with a well width of L = 6.0 nm for different diffusion lengths L d .…”

“…The strained quantum well (QW) laser has a more beneficial performance than other QW lasers such as lower threshold current density [1] and wider modulation bandwidth [2], and the emission wavelength of the strained QW laser can be adjusted by appropriately changing the strain [3]. With regard to the InGaAs/GaAs material system, In distribution directly decides the performances of devices.…”

“…Meanwhile, interdiffusion of atoms across the QW heterojunction plays an important role in tailoring the compositional and confinement profiles. In addition, more investigations have been made to analyze interdiffusion and tune the emission wavelength accurately [3]. An asymmetrical In profile is induced by the surface segregation, which also makes it troublesome to control the emission wavelength through the annealing process.…”

“…With regard to the InGaAs/GaAs material system, In distribution directly decides the performances of devices. There are two major processes that influence In distribution in the InGaAs/ GaAs heterostructure with the molecular beam epitaxy technology: surface segregation in the growth process [4] and interdiffusion in the annealing process [3].…”