The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs

Kosier, S.L.; Schrimpf, R.D.; Cellier, François E.; Galloway, K.F.

doi:10.1109/23.101233

Cited by 10 publications

(2 citation statements)

References 31 publications

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“…The breakdown voltage of the 100-V device type is relatively unchanged. This behavior is consistent with the investigations of Kosier et al [14]. However, the breakdown voltages of the 500-V devices decrease: one decreases by 10 V, while the other decreases by merely 1 V.…”

Section: Discussionsupporting

confidence: 90%

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Effect of neutron irradiation on the breakdown voltage of power MOSFET's

Hasan

Kosier

Schrimpf

et al. 1994

IEEE Trans. Nucl. Sci.

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Abstmct-The effect of neutron irradiation on power metaloxide-semiconductor field effect transistor (power MOSFET) breakdown voltage has been investigated. Transistors with various breakdown voltage ratings were irradiated in a TRIGA nuclear reactor with cumulative fluence levels up to 5 X 1014 neutrons / cm2 (1 MeV equivalent). Noticeable increases in the breakdown voltages are observed in n-type MOSFET's after 1013 neutrons / cm2 and in p-type MOSFETs after 10l2 neutrons / cm2. An increase in breakdown voltage of as much as 30% is observed after 5 X 1014 neutrons / cm2. The increase in breakdown voltage is attributed to the neutron-irradiation-induced defects which decrease the mean free path and trap majority carriers in the space charge region. The effect of positive trapped oxide charge due to concomitant gamma radiation and the effect of the termination structure on the increase in breakdown voltage are considered. An empirical model is presented to predict the value of the breakdown voltage as a function of neutron fluence.

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Section: Discussionsupporting

confidence: 90%

“…Gamma radiation introduces positive charge in the field oxides [12]. Surface charge introduced by the concomitant gamma radiation changes the potential distribution in the lightly doped epitaxial layer [13], [14] 3(a) shows its effect on a p + n junction, and Fig. 3(b) shows its effect on an n + p junction.…”

Section: Neutron Irradiationmentioning

confidence: 99%