The effects of ionizing radiation on the Honeywell HTMOS high temperature linear CMOS technology

Larsen, Duane E.; Welling, P.; Tsacoyeanes, W.

doi:10.1109/redw.1996.574189

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“…During the irradiation, V T P and V T N shift so the value of V M must be different from the initial one. The shift of the switching threshold voltage has been found as well by other authors [9].…”

Section: Discussionsupporting

confidence: 85%

Evolution of lowest supply voltage and hysteresis phenomena in irradiated analog CMOS switches

Franco

Zong

Agapito

et al.

2004 IEEE Radiation Effects Data Workshop (IEEE Cat. No.04TH8774)

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Abstract-Radiation tests on CMOS analog switches were done in order to select the most tolerant device for the future use in the cryogenic system of LHC. After the irradiation, the devices showed some interesting changes related to the power supplies: An increase in the lowest supply voltage capable of biasing correctly the devices, some devices cannot work with TTL logic levels and hysteresis phenomena appear.

show abstract

Section: Discussionsupporting

confidence: 85%

Evolution of lowest supply voltage and hysteresis phenomena in irradiated analog CMOS switches

Franco

Zong

Agapito

et al.

2004 IEEE Radiation Effects Data Workshop (IEEE Cat. No.04TH8774)

View full text Add to dashboard Cite

show abstract

“…CMOS supervisory circuits also showed a shift in the values of threshold voltages, like those of RESET, PFI, etc. Similar changes have been found by the authors in other CMOS devices [8] and also reported in other works [9].…”

Section: Discussionsupporting

confidence: 92%