The effects of magnetic field intensity on the magnetic properties of Fe80Si9B11 amorphous alloys during magnetic annealing

Zhang, Yin; Yang, Yong; Wu, Zhaohui; Feng, Xiuli; Wang, Chenxu; Zhang, Shiyan; Hou, Xueling; Tan, Xiaohua; Xu, Huibin

doi:10.1016/j.intermet.2021.107200

Cited by 10 publications

(1 citation statement)

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“…When comparing with other physical material systems, e.g. magnetic [33] and piezo-electric [34], where annealing while applying an alternating field polarity can have significant positive effects [8,35], this approach has not yet been investigated in connection to a-AlO x only tunnel junctions and is illustrated in Fig 1(b).…”

Section: Introductionmentioning

confidence: 99%

Alternating Bias Assisted Annealing of Amorphous Oxide Tunnel Junctions

Pappas,

Field,

Kopas

et al. 2024

Preprint

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We demonstrate a transformational technique for controllably tuning the electrical properties of individual aluminum-oxide tunnel junctions. Using conventional test equipment to apply an alternating bias to a heated tunnel barrier, giant increases in the room temperature resistance, greater than 70%, can be achieved. The rate of resistance change is shown to be strongly temperature- dependent, and is weakly dependent on junction size in the sub-micron regime. In order to measure their tunneling properties at mK temperatures, we characterized transmon qubit junctions treated with this alternating-bias assisted annealing (ABAA) technique. The measured frequencies follow the Ambegaokar-Baratoff relation between the shifted resistance and critical current. Further, these studies show a reduction of junction-contributed loss on the order of ≈ 0.3 × 10−6, and indicate that there is a reduction in resonant-and off-resonant-two level system defects when compared to untreated samples. Imaging with high-resolution TEM shows that the barrier is still predominantly amorphous with a more uniform distribution of aluminum coordination across the barrier relative to untreated junctions. This new approach is expected to be widely applicable to a broad range of devices that rely on amorphous aluminum oxide, and is likely applicable to many other metal- insulator-metal devices.

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Section: Introductionmentioning

confidence: 99%