The effects of neutron irradiation and low temperature annealing on the electrical properties of highly doped 4H silicon carbide

Almaz, Ekrem; Stone, Stephen E.; Blue, Thomas E.; Heremans, Joseph P.

doi:10.1016/j.nima.2010.06.211

Cited by 9 publications

(5 citation statements)

References 3 publications

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“…Point defects are known to trap free carriers and act as scattering centres and thus may reduce the carrier mobility. Consequently, in agreement with the RBS data shown here also the results from electrical measurements point to a linear increase of the number of 5 defects produced with increasing neutron fluence [16]. It is to be expected that this holds well also for neutron fluences lower than those for which RBS analysis is possible.…”

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confidence: 91%

“…A linear increase of the mean value n da with rising neutron fluence N n is found which can be represented by n da = N n • 2.6×10 -21 cm 2 . It was found previously that also the carrier concentration and their mobility decrease linearly in heavily doped SiC with rising neutron fluence [16]. Point defects are known to trap free carriers and act as scattering centres and thus may reduce the carrier mobility.…”

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confidence: 96%

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Damage formation and optical absorption in neutron irradiated SiC

Wendler

Bierschenk

Felgenträger

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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The defect formation in neutron irradiated SiC was investigated by means of Rutherford backscattering spectrometry in channelling mode (RBS), optical absorption and Raman spectroscopy. The relative defect concentration determined by RBS increases linearly with the neutron fluence without any saturation in the investigated fluence region. The spectral dependence of the absorption coefficient  at photon energies below 3.2 eV is independent of the neutron fluence and corresponds to that observed in low-fluence ion implanted SiC. An increase of the defect concentration exhibits only in an increase of the absolute value of .For photon energies above 3.3 eV again an exponential increase of the absorption coefficient is found but with a slope increasing with rising defect concentration. This absorption is assumed to be of the Urbach type. Around 1.56 eV a broad absorption band is observed which is most probably caused by divacancies V Si V C . The defects produced by the neutron irradiation of SiC result in a decrease of the peak intensity and a shift of the position of TO and LO Raman peaks towards lower wave numbers. The latter can be explained by tensile stress due to defects and mass increase of lattice atoms due to neutron capturing. Keywords:Silicon carbide, neutron irradiation, optical spectroscopy, Raman spectroscopy 2 IntroductionRadiation damage by energetic ions or neutrons in crystals disturbs the periodic arrangements of atoms and thus is connected with significant changes of the optical properties of the corresponding material. Although these effects can be observed also in the infrared reflectance (see e.g. [1, 2]), it is especially significant at photon energies below the fundamental absorption edge because the sharp edges of valence and conduction band are directly related to the perfect periodic lattice structure. Consequently, the optical absorption at photon energies within the region of transparency of the perfect crystal, i.e. below the fundamental absorption edge, is a sensitive tool to detect radiation damage. This was The optical absorption coefficient  was calculated from the transmission spectra measured using an UV-VIS spectrometer Cary 5000 operating in the range of spectroscopic wave numbers  between 3000 and 30000 cm -1 corresponding to photon energies E between 0.37 and 3.7 eV (in the following text both units will be used). It is assumed that the samples are homogeneously damaged over the whole thickness, which allows a direct calculation of  basing on the Beer-Lambert law. In all cases the refractive index was assumed to be unchanged and the data for crystalline SiC were taken from Ref. Olympus microscope was used to focus the laser beam (spot size  2µm) on the samples and also collected the backscattering Raman signal. An integrated triple spectrometer was used in the double subtractive mode to reject Rayleigh scattering and dispersed the light onto a liquid nitrogen cooled Symphony CCD detector. The spectrometer was calibrated with the silicon phonon mode at 520 cm -1 ....

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confidence: 91%

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confidence: 96%

Damage formation and optical absorption in neutron irradiated SiC

Wendler

Bierschenk

Felgenträger

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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“…A more rigorous approach that does account for both neutron flux and damage cross section for a particular neutron energy has recently been described in Ref. 32, which enables the neutron energy spectrum to be approximated by a mono-energetic equivalent fluence that is convenient for extraction of quantitative carrier removal (defect introduction) rates. Using this improved methodology, we calculate the carrier removal rate for a 1 MeV equivalent neutron fluence to be ∼51 ± 3.5 cm −1 [Fig.…”

Section: Article Scitationorg/journal/apmmentioning

confidence: 99%

Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3

et al. 2018

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“…Considering the detection limitation of common experimental methods such as RS, electrical measurement provides a feasible way to handle this problem because the electrical properties of materials are very sensitive to the irradiation-induced defects. Using Hall-effect measurements, 24 capacitance–voltage ( C – V ) tests, 25 and current–voltage ( I – V ) tests, 17 the free-carrier removal rate (η e ) has already been studied. η e is defined as the concentration of carriers eliminated by one ion per square centimeter: η e = d n /dφ, where n (cm –3 ) is the carrier concentration and φ (cm –2 ) is the irradiation fluence.…”

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confidence: 99%

Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions

Guo,

Peng,

Liu

et al. 2023

ACS Omega

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In this work, we obtained the Si vacancy generation rates η in SiC nanowire samples irradiated with 1, 3 MeV protons, and 2.8 MeV helium ions using the electrical resistivity measurement, which further indicated an intuitive linear function correlation between η and the nuclear stopping power of the incident ions at a low dpa level with a coefficient of 2.15 × 10 −3 eV −1 . Prediction through this correlation is consistent with previous work. Besides, the measured value is about 1/2 of the simulation results with the popular SRIM code. Overall, our work provides a feasible way to get the generation rate of a certain irradiation-induced defect by electric measurements, and the correlation obtained is practically useful in various applications.

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The effects of neutron irradiation and low temperature annealing on the electrical properties of highly doped 4H silicon carbide

Cited by 9 publications

References 3 publications

Damage formation and optical absorption in neutron irradiated SiC

Damage formation and optical absorption in neutron irradiated SiC

Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3

Accurate Measurement of Defect Generation Rates in Silicon Carbide Irradiated with Energetic Ions

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