The effects of nitrogen partial pressure on the properties of the TaNx films deposited by reactive magnetron sputtering

Li, Ta-Ching; Lwo, Ben-Je; Pu, Nen-Wen; Yu, Shih-Piao; Kao, Chin-Hsing

doi:10.1016/j.surfcoat.2006.01.013

Cited by 29 publications

(9 citation statements)

References 28 publications

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“…Figure b shows the intrinsic properties ( H and E ) taken within the impression depth of 50–150 nm. First, it can be seen that the hardness for pure TaN (at 1.0 position of x -axis) is 24.7 ± 0.71 GPa according to the experimental results reported elsewhere . Then, it increases to the maximum value of 27.8 ± 0.52 GPa when N/A is 0.77, and it drops slightly to 26.8 ± 0.49 and 26.4 ± 0.41 GPa as N/A further decreases to 0.50 and 0.31, respectively.…”

Section: Resultsmentioning

confidence: 99%

“…First, it can be seen that the hardness for pure TaN (at 1.0 position of x-axis) is 24.7 ± 0.71 GPa according to the experimental results reported elsewhere. 48 Then, it increases to the maximum value of 27.8 ± 0.52 GPa when N/A is 0.77, and it drops slightly to 26.8 ± 0.49 and 26.4 ± 0.41 GPa as N/A further decreases to 0.50 and 0.31, respectively. In the case of pure W (at 0.0 position of x-axis), the lowest hardness of 14.09 ± 0.51 GPa is exhibited.…”

Section: Hardness and Elasticity Modulusmentioning

confidence: 90%

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Ultrafine Ceramic Grains Embedded in Metallic Glass Matrix: Achieving Superior Wear Resistance via Increase in Both Hardness and Toughness

Yang

Wen

Xuan

et al. 2018

ACS Appl. Mater. Interfaces

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As structural materials, crystalline or metallic glass materials have attracted scientific and practical interests. However, some mechanisms involving critical size and shear bands have adverse effects on their mechanical properties. Here, we counter these two effects by introducing a special structure with ultrafine ceramic grains (with a diameter of ∼2.0 nm) embedded into a metallic glass matrix, wherein the grains are mainly composed of a Ta-W-N solid solution structure in nature, surrounded by a W-based amorphous matrix that contains Ta and N atoms. Such a structure is in situ formed during preparation, which combines the merits of both phases to achieve simultaneous increase in hardness and toughness relative to references (pure TaN and W) and thus superior wear resistance. Even more remarkable, a favorable variation of increased hardness but reduced elasticity modulus can be induced by this structure. Intrinsically, ultrafine ceramic grains (free of dislocations), embedded in the metallic glass matrix, could prevent shear band propagation within the glass matrix and further improve the hardness of the matrix material. In return, such glass matrix allows for stiffness neutralization and structural relaxation to reduce the elasticity modulus of ceramic grains. This study will offer a new guidance to fabricate ultrahigh-performance metal-based composites.

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Section: Resultsmentioning

confidence: 99%

Section: Hardness and Elasticity Modulusmentioning

confidence: 90%

Ultrafine Ceramic Grains Embedded in Metallic Glass Matrix: Achieving Superior Wear Resistance via Increase in Both Hardness and Toughness

Yang

Wen

Xuan

et al. 2018

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Hence, in the reactive sputtering process, the plasma N 2 -toAr gas flow ratio is a major factor influencing the properties of the TaN thin films, as investigated by many authors [5,11,12]. Little is known about the influence of the N 2 -to-Ar gas pressure ratio and about the influence of the sputtering power on the TaN microstructural properties.…”

Section: Introductionmentioning

confidence: 99%

Effects of processing parameters on the properties of tantalum nitride thin films deposited by reactive sputtering

Nazon

Sarradin

Flaud

et al. 2008

Journal of Alloys and Compounds

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“…There was no metal or dielectric plug used for the anchor supporting structure in this approach, which make the process much more controllable and flexible. TaN was used as the electrode material in micro-bridge structure to transfer sensing signal to CMOS circuit based on its electrical and optical property [7][8][9]. PECVD low temperature alpha-Si film was used as sacrificial layer instead of organic material in order to make the process compatible with standard CMOS process.…”

Section: Methodsmentioning

confidence: 99%

CMOS compatible MEMs process for post interconnect single chip integration application

Kang¹,

Zuo²,

Li³

et al. 2011

2011 9th IEEE International Conference on ASIC

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In this work, CMOS compatible MEMs platform process was developed on 200mm Cu BEOL Line. The fabrication technology was dedicated to micro-bridge structure based MEMs application. The integration scheme was post interconnect single chip integration, in which MEMs was built directly on standard CMOS interconnect structure and can share Si area with standard CMOS circuit. Because of the shared Si area and single chip integration scheme, the application cost can be greatly reduced with increasing performance. Modified CMOS-BEOL process was used to develop the CMOS-MEMs interface structure, and top metal was used both as the functional layer and PAD layer with lower step height by optimized planarization process. As to the bridge structure, TaN was used as electrode material, and alpha-Si film was used as the sacrificial material fabricated by low Temperature PECVD technology. No metal or dielectric material plug was used for the anchor supporting structure, which make the process much more controllable and flexible. For one of the Sensor product application, the sensing material was using B-doped alpha-Si film fabricated by PECVD and in situ doping process. To obtain good contact between TaN electrode and sensing material, reactive preclean was chosen instead of low-power Ar-preclean in order to control the sensing material loss. TaN was etched by standard Cu BEOL tool using CF4/CHF3 gas. The sensing material loss can be well controlled to less than 30nm, and the uniformity of sensing resistor was about 2sigma/mean < 3% for 200A TaN. The TCR of the sensing resistor was about -1.5% � -2% which is compatible to the as-deposited sensing material film, and can well match this sensor application.

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The effects of nitrogen partial pressure on the properties of the TaNx films deposited by reactive magnetron sputtering

Cited by 29 publications

References 28 publications

Ultrafine Ceramic Grains Embedded in Metallic Glass Matrix: Achieving Superior Wear Resistance via Increase in Both Hardness and Toughness

Ultrafine Ceramic Grains Embedded in Metallic Glass Matrix: Achieving Superior Wear Resistance via Increase in Both Hardness and Toughness

Effects of processing parameters on the properties of tantalum nitride thin films deposited by reactive sputtering

CMOS compatible MEMs process for post interconnect single chip integration application

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