The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition

Lee, Hyun Ju; Park, Min Hyuk; Hwang, Cheol Seong

doi:10.1149/1.3122137

Cited by 3 publications

(2 citation statements)

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“…First of all, the effect of the oxygen source used to deposit a layer of titania for the subsequent growth of a layer of PbO x was considered. This study was already published elsewhere . It shows that (i) a PbO x layer enhances the growth of the TiO 2 layer, and vice versa (this has been attributed to a catalytic effect, such as those already observed in a multioxide ALD component ,, ), (ii) the growth of PbO x on TiO 2 is enhanced when H 2 O was used as an oxygen source for the Ti precursor compared with O 3 , and (iii) the Pb/Ti ratio increases more quickly when O 3 is used to grow the TiO 2 layer.…”

Section: Resultssupporting

confidence: 62%

“…The samples were loaded into the ALD chamber again for subsequent PbO x growth. Furthermore, prior to the ALD of PbO x using O 3 , rather thick ( n cy = 400) PbO x films were deposited on the substrates using H 2 O to protect the substrates from being damaged . Figure a,b shows the changes in the Pb LD of the PbO x films grown on Si and Ru substrates using H 2 O and O 3 as oxygen sources, respectively, as a function of n cy .…”

Section: Resultsmentioning

confidence: 99%

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Unusual Growth Behavior of Atomic Layer Deposited PbTiO₃ Thin Films Using Water and Ozone As Oxygen Sources and Their Combination

et al. 2010

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PbTiO3 thin films were deposited on Si and Ru substrates by atomic layer deposition at a substrate temperature of 200 °C using H2O and O3 as oxygen sources and lead(II) bis(3-N,N-dimethylamino-2-methyl-2-propoxide) and titanium(IV) isopropoxide as the Pb and Ti precursors, respectively. When H2O was used as the oxygen source for both Pb and Ti precursors, film growth was most effective under the conditions where a stoichiometric PTO film was achieved (Pb/Ti concentration ratio ∼ 1). On the other hand, the PTO growth per cycle increased with increasing the PbO x /TiO2 subcycle ratio when O3 was used as the oxygen source for the Ti precursor, even when Pb-rich PTO films were deposited. These unexpected results were explained by the different reactions occurring according to the oxygen source used, in particular, by a reaction mechanism involving the direct condensation between surface formate species and alkoxy species in the case of ozone.

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Section: Resultssupporting

confidence: 62%

Section: Resultsmentioning

confidence: 99%

Unusual Growth Behavior of Atomic Layer Deposited PbTiO₃ Thin Films Using Water and Ozone As Oxygen Sources and Their Combination

et al. 2010

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Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

et al. 2018

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In the past decade, atomic layer deposition (ALD) has become an important thin film deposition technique for applications in nanoelectronics, catalysis, and other areas due to its high conformality on 3-D nanostructured substrates and control of the film thickness at the atomic level. The current applications of ALD primarily involve binary metal oxides, but for new applications there is increasing interest in more complex materials such as doped, ternary, and quaternary materials. This article reviews how these multicomponent materials can be synthesized by ALD, gives an overview of the materials that have been reported in the literature to date, and discusses important challenges. The most commonly employed approach to synthesize these materials is to combine binary ALD cycles in a supercycle, which provides the ability to control the composition of the material by choosing the cycle ratio. Discussion will focus on four main topics: (i) the characteristics, benefits, and drawbacks of the approaches that currently exist for the synthesis of multicomponent materials, with special attention to the supercycle approach; (ii) the trends in precursor choice, process conditions, and characterization methods, as well as underlying motivations for these design decisions; (iii) the distribution of atoms in the deposited material and the formation of specific (crystalline) phases, which is shown to be dependent on the ALD cycle sequence, deposition temperature, and post-deposition anneal conditions; and (iv) the nucleation effects that occur when switching from one binary ALD process to another, with different explanations provided for why the growth characteristics often deviate from what is expected. This paper provides insight into how the deposition conditions (cycle sequence, temperature, etc.) affect the properties of the resultant thin films, which can serve as a guideline for designing new ALD processes. Furthermore, with an extensive discussion on the nucleation effects taking place during the growth of ternary materials, we hope to contribute to a better understanding of the underlying mechanisms of the ALD growth of multicomponent materials.

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Low temperature atomic layer deposition of PbO₂ for electrochemical applications

Bielinski,

Emery,

Agyapong-Fordjour

et al. 2024

Nanotechnology

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A low temperature atomic layer deposition (ALD) process for PbO2 was developed using bis(1-dimethylamino-2-methyl-2-propanolate)lead(II), Pb(DMAMP)2, and O3 as the reactants, with a high growth rate of 2.6 Å/cycle. PbO2 readily reduces under low oxygen partial pressures at moderate temperatures making it challenging to deposit ALD PbO2 from Pb2+ precursors. However, thin films deposited with this process showed small crystalline grains of α-PbO2 and β-PbO2, without signs of reduced PbO x phases. The ALD PbO2 thin films show the high electrical conductivity characteristic of bulk PbO2. In situ measurements of ALD PbO2 film conductivity during growth suggest a reaction mechanism by which sub-surface oxygen mobility contributes to the growth of resistive PbO or PbO x during the Pb(DMAMP)2 surface reaction step, which is only fully oxidized from Pb2+ to Pb4+ during the O3 reaction step. These films were electrochemically reduced to PbSO4 in H2SO4 and then reoxidized to PbO2, demonstrating their suitability for use as an electrode material for fundamental battery research and other electrochemical applications.

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The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition

Cited by 3 publications

References 12 publications

Unusual Growth Behavior of Atomic Layer Deposited PbTiO₃ Thin Films Using Water and Ozone As Oxygen Sources and Their Combination

Unusual Growth Behavior of Atomic Layer Deposited PbTiO₃ Thin Films Using Water and Ozone As Oxygen Sources and Their Combination

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Low temperature atomic layer deposition of PbO₂ for electrochemical applications

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The Effects of Oxidants on the Growth Behavior of PbTiO3 Thin Film by Atomic Layer Deposition

Cited by 3 publications

References 12 publications

Unusual Growth Behavior of Atomic Layer Deposited PbTiO3 Thin Films Using Water and Ozone As Oxygen Sources and Their Combination

Unusual Growth Behavior of Atomic Layer Deposited PbTiO3 Thin Films Using Water and Ozone As Oxygen Sources and Their Combination

Synthesis of Doped, Ternary, and Quaternary Materials by Atomic Layer Deposition: A Review

Low temperature atomic layer deposition of PbO2 for electrochemical applications

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Product

Resources

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Unusual Growth Behavior of Atomic Layer Deposited PbTiO₃ Thin Films Using Water and Ozone As Oxygen Sources and Their Combination

Unusual Growth Behavior of Atomic Layer Deposited PbTiO₃ Thin Films Using Water and Ozone As Oxygen Sources and Their Combination

Low temperature atomic layer deposition of PbO₂ for electrochemical applications