The effects of oxygen impurity in TMA on AlGaAs layers grown by MOVPE

Hata, Masahiko; Takata, Hideaki; Yako, Tadaaki; Fukuhara, Noboru; Maeda, Takuya; Uemura, Yukikazu

doi:10.1016/0022-0248(92)90495-5

Cited by 24 publications

(4 citation statements)

References 12 publications

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“…Low growth temperatures for the n-AlGaAs emitter layer result in poor crystal quality due to oxygen incorporation. 14) For the n-InGaP emitter layer, low growth temperatures cause band gap broadening due to In/Ga order-disordering effect, 15) which may affect DC device characteristics such as turn-on voltage. A long pause is required to elevate the emitter growth temperature after the base layer, which may result in incorporation of impurities and defects at the interface.…”

Section: Introductionmentioning

confidence: 99%

Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors

Yamada¹,

Fukuhara²,

Hata³

2006

jjap

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The influence of the V/III ratio of carbon-doped p-GaAs on current gain and its thermal stability in InGaP/GaAs heterojunction bipolar transistors (HBTs) was studied. We have grown p-GaAs bulk layers and InGaP/GaAs HBTs at a growth temperature of 620 °C with V/III ratios between 0.35 and 25 employing CBrCl3 as a carbon source using a mass production metal–organic chemical vapor deposition instrument. We have found that a V/III ratio of 0.7 showed high current gain; however, the V/III ratio of 0.7 degrades under thermal annealing. On the other hand, a V/III ratio of 25 represents a significant improvement in thermal stability. Time resolved photo-luminescence revealed that the lifetime for the V/III ratio of 0.7 decreased with increasing annealing time, while the lifetime for the V/III ratio of 25 remained unchanged. These results suggest that current gain degradation for the V/III ratio of 0.7 is caused by the creation of recombination centers in the base layer.

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Section: Introductionmentioning

confidence: 99%

Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors

Yamada¹,

Fukuhara²,

Hata³

2006

jjap

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“…the usc of TMAI in MOVPE growth of Al This carbon contamination arises from the in-Ga As is its reaction with traces of' oxygen complete elimination of methyl groups from the leading to the formation of volatile alkoxides [3,4]. These alkoxides will incorporate in the Al kGa I --As epilayers and act as deep levels Recent publications [6][7][8] demonstrated the All epilayers were grown with a V/Ill ratio rangsuccessful use of the alternative aluminium pre-ing from 133 to 185, at temperatures between 575 cursor trimethylamine-alane (TMAAI), i.e.…”

Section: Introductionmentioning

confidence: 99%

Growth of high-quality AlxGa1−xAs (x = 0.05−0.65) by low-pressure metalorganic vapour phase epitaxy using dimethylethylamine-alane

Hageman¹,

Olsthoorn²,

Giling³

1994

Journal of Crystal Growth

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High-quality Al~Ga-VAs (x = ().()5-t).65) has been grown by low-pressure metulorganic vapour phase epilaxv (MOVPE) using dimethylethylamine-alane (DMEAAI) as aluminium precursor. No temperature dependence is found for the growth rate or for the aluminium incorporation between T = 575°Cand T = 725°C. The aluminium incorporation is linearly dependent on the fraction of DMEAAI in the gas phase. Photoluminesecnce (Pt.) measurements show a very low carbon incorporation, which is independent of the aluminium fraction and the growth temperature. Because of this low carbon content, the epilaycrs show ti-type conductivity up to aluminium fractions of t).65 and high carrier mohilities. Excitonie PL peaks show narli)W linewidths that arc coniparable with the best values reported in the literature. This indicates that the inipuritv content is low and that compositional uniftrmitv throughout the layer is very good. A multi quantum well with good PL properties has also been grown. ______ which decrease the photoluminescence intensity Corresponding author [5]. Ot)22-0246/94/507.h1)~1994 Elsevier Science By. All rights reserved SSDI))022-0246(94)tH)395-h

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“…The presence of Al in the system leads to a significant increase in carbon incorporation [47,48] from not fully decomposed TMAl precursor molecules [49]. Another reason could be oxygen incorporation into the AlGaP shell, where ternary Al-containing semiconductors grown by MOVPE with an Al composition larger than around 30% have been observed to contain relatively higher oxygen contamination [50][51][52][53]. This is because TMAl is very reactive and Al binds very well to oxygen [54] that could potentially be present in the growth reactor to a small amount.…”

Section: Resultsmentioning

confidence: 99%

Growth of wurtzite Al_xGa_1−xP nanowire shells and characterization by Raman spectroscopy

et al. 2016

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The phonon energies of AlGaP in wurtzite crystal structure are generally not known, as opposed to their zincblende counterparts, because AlGaP crystallizes in zincblende phase in bulk and thin films structures. However, in nanowires AlGaP can be grown in wurtzite crystal structure. In this work we have grown wurtzite GaP/AlGaP/GaP core-shell nanowires by use of MOVPE. After developing suitable growth conditions, the Al composition was determined by STEM-EDX measurements and the wurtzite AlGaP phonon energies by Raman spectroscopy. Raman measurements show a peak shift with increasing Al composition in the AlGaP shell. We find that the phonon energies for wurtzite AlGaP are slightly lower than for zincblende AlGaP. Our results can be used to determine the Al composition in wurtzite AlGaP by Raman scattering.

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The effects of oxygen impurity in TMA on AlGaAs layers grown by MOVPE

Cited by 24 publications

References 12 publications

Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors

Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors

Growth of high-quality AlxGa1−xAs (x = 0.05−0.65) by low-pressure metalorganic vapour phase epitaxy using dimethylethylamine-alane

Growth of wurtzite Al_xGa_1−xP nanowire shells and characterization by Raman spectroscopy

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The effects of oxygen impurity in TMA on AlGaAs layers grown by MOVPE

Cited by 24 publications

References 12 publications

Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors

Influence of V/III Ratio of Carbon-Doped p-GaAs on Current Gain and Its Thermal Stability in InGaP/GaAs Heterojunction Bipolar Transistors

Growth of high-quality AlxGa1−xAs (x = 0.05−0.65) by low-pressure metalorganic vapour phase epitaxy using dimethylethylamine-alane

Growth of wurtzite AlxGa1−xP nanowire shells and characterization by Raman spectroscopy

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Growth of wurtzite Al_xGa_1−xP nanowire shells and characterization by Raman spectroscopy