The Effects of Polarization-Modulated Quaternary AlInGaN Barriers in Deep-UV-LED

Liao, Fengbo; Zhang, Keming; Zeng, Ni; Lian, Mengxiao; Li, Jialin; Zhang, Xichen; Yin, Yongsheng; Wu, Qing‐Ping

doi:10.1007/s11664-021-09272-1

Cited by 4 publications

(2 citation statements)

References 35 publications

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“…31 Where η is the base strain field of quaternary AlInGaN barrier growing on the GaN layer, P(xN, η) represents the nonlinear response of the binary constituents expressed by other formulas. 33 For a given alloy composition of the Al x In y Ga 1−x−y N quantum barrier based on GaN, we should further consider the polarization ΔP in GaN, which is defined as Eq. 4.…”

Section: Structures and Parametersmentioning

confidence: 99%

Quaternary AlInGaN/AlInGaN Polarization-Engineered Green Lights-Emitting Diodes by Using Inverted Trapezoidal Quantum Barriers

Xie,

Zou,

Zhang

et al. 2023

ECS J. Solid State Sci. Technol.

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In this paper, a structure design using grading quaternary AlInGaN as inverted trapezoidal multiple quantum barriers is shown. This paper proposes an inverted trapezoidal structure in quantum barriers to decelerate the transmission of the electron which will enhance efficient carrier injection into the quantum wells and get a more uniform distribution of carriers. The polarization-matched AlInGaN/AlInGaN structures have less polarization and increase the overlap of electron and hole wave function, effectively improving the internal quantum efficiency and wall-plug efficiency, and making the In composition adjustable. The results show that the Inverted trapezoidal polarization-matched AlInGaN structure significantly improves the phenomenon of “green gap” and “green droop”. As a result, the new structure mitigates the droop ratio from 25.5% to 7%, and the LED power is increased from 59.95mW to 109.68mW at 200 mA. Finally, the device exhibits a uniform current distribution and greater radiative recombination while reducing resistance.

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Section: Structures and Parametersmentioning

confidence: 99%

Quaternary AlInGaN/AlInGaN Polarization-Engineered Green Lights-Emitting Diodes by Using Inverted Trapezoidal Quantum Barriers

Xie,

Zou,

Zhang

et al. 2023

ECS J. Solid State Sci. Technol.

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“…quantum efficiency (EQE) and wall-plug efficiency (WPE) are generally lower than 10% and 5%, respectively. Although many efforts have been made to improve the performance of UV LEDs [6]- [12], the high-power, high-efficiency, and long-life DUV LEDs are still difficult to achieve.…”

mentioning

confidence: 99%

High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer

Liu

Tao

et al. 2023

IEEE Photonics J.

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In this work, we investigate the performance improvement of N-polar AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) by the inversion of the hole injection layer from N-polar to Ga-polar. The influence of different inversion points on the performance and the energy band of DUV LED is systematically studied， and the principle of performance improvement of DUV LED is explained in detail through the analysis of the energy band. Furthermore, according to the simulation results and practical application, an appropriate inversion point is selected. Under the current of 120 mA, with polarity inversion of the hole injection layer, the light output power of the DUV LEDs increases from 21.34 mW to 29.71 mW, and the applied voltage reduces from 16.06 V to 9.63 V. The DUV LED with polarity inversion has a 132% increase in wall-plug efficiency (WPE) compared with the DUV LED which is totally along [000-1] direction. Therefore, polarity inversion is an effective way to achieve high-performance UV-LEDs.

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Performance enhancement of deep-ultraviolet LEDs by using quaternary AlInGaN polarization-engineered multiple-symmetrical-stair quantum barriers without electron blocking layer

et al. 2022

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In this paper, a structure design using quaternary AlInGaN as multiple-symmetrical-stair-shaped quantum barriers without an electron blocking layer is shown. The results show this design mitigates the droop effect to ∼ 0.1 % , and the internal quantum efficiency reaches about 93.4%. It is believed that the better performance results from balanced electron and hole concentration and distribution of the current among the quantum wells, along with reduced non-radiative recombination. This work may be useful in the application of using quaternary AlInGaN materials as quantum barrier layers with computational simulations to design structures with electron-barrier-free layers.

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The Effects of Polarization-Modulated Quaternary AlInGaN Barriers in Deep-UV-LED

Cited by 4 publications

References 35 publications

Quaternary AlInGaN/AlInGaN Polarization-Engineered Green Lights-Emitting Diodes by Using Inverted Trapezoidal Quantum Barriers

Quaternary AlInGaN/AlInGaN Polarization-Engineered Green Lights-Emitting Diodes by Using Inverted Trapezoidal Quantum Barriers

High Efficiency Deep Ultraviolet Light-Emitting Diodes With Polarity Inversion of Hole Injection Layer

Performance enhancement of deep-ultraviolet LEDs by using quaternary AlInGaN polarization-engineered multiple-symmetrical-stair quantum barriers without electron blocking layer

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