The effects of SiO 2 coating on diamond abrasives in sol-gel tool for SiC substrate polishing

Lu, Jing; Xu, Yongchao; Zhang, Yunhe; Xu, Xipeng

doi:10.1016/j.diamond.2017.05.003

Cited by 34 publications

(14 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[101] Copyright 2017, Elsevier. [101] Diamond 0.6 TiO 2 <5 0.111 0.915 PCMP [102] Polystyrene 160 CeO 2 -TiO 2 20 0.122 0.497 PCMP [103] Polyurethane Unspecified CeO 2 Unspecified 3.0-4.0 6.610 ECMP [104] Polystyrene Unspecified CeO 2 Unspecified ≈2.300 0.449 ECMP [105] Polystyrene 200 CeO 2 8.5-27.5 Unspecified 2.388 ECMP [106] Figure 14. Schematic diagram of the fixed abrasive polishing, where the abrasive particles are fixed on the surface of the polishing pad.…”

Section: Electro-chemical Mechanical Polishingmentioning

confidence: 99%

“…Typical core-shell abrasives and their CMP performance for SiC wafers are summarized in Table 2. [101][102][103][104][105][106] It is clear that the structures of core-shell abrasives are designed for specific polishing processes. Especially, in the PCMP process, TiO 2 is used as the shell material due to its photocatalytic activity.…”

Section: Core-shell Abrasivementioning

confidence: 99%

See 1 more Smart Citation

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Wang

et al. 2023

Adv Materials Inter

View full text Add to dashboard Cite

Abstract4H silicon carbide (4H‐SiC) holds great promise for high‐power and high‐frequency electronics, in which high‐quality 4H‐SiC wafers with both global and local planarization are cornerstones. Chemical–mechanical polishing (CMP) is the key processing technology in the planarization of 4H‐SiC wafers. Enhancing the performance of CMP is critical to improving the surface quality and reducing the processing cost of 4H‐SiC wafers. In this review, the superior properties of 4H‐SiC and the processing of 4H‐SiC wafers are introduced. The development of CMP with chemical, mechanical, and chemical–mechanical synergistic approaches to improve the performance of CMP is systematically reviewed. The basic principle and processing system of each improvement approach are presented. By comparing the material removal rate of CMP and the surface roughness of CMP‐treated 4H‐SiC wafers, the prospect on the chemical, mechanical, and chemical–mechanical synergistic improvement approaches is finally provided.

show abstract

Section: Electro-chemical Mechanical Polishingmentioning

confidence: 99%

Section: Core-shell Abrasivementioning

confidence: 99%

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Wang

et al. 2023

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…Based on the "trap effect" of the polishing plate during processing, the scratches caused by large abrasive particles on the machined wafer can be effectively avoided. Xu et al [29][30][31] used sol-gel technology to disperse ultra ne abrasive evenly in sodium alginate solution, and then solidi ed with Ca 2+ solution to form semi-xed exible polishing plate. This technology was proposed for the mechanical polishing of single crystal sapphire, single crystal silicon carbide and other photoelectric wafer materials to achieve nano-scale surface roughness.…”

Section: Introductionmentioning

confidence: 99%

A Novel Polishing Process with Rigid-Flexible Composite Structure Plate and Its Performance in Polishing Sapphire Wafer

Chen

Wang

et al. 2021

Preprint

Self Cite

View full text Add to dashboard Cite

A novel flexible polishing process has been developed for sapphire wafer by using a polishing plate with rigid-flexible composite structure to satisfy the demands of excellent surface shape accuracy and high surface topography quality simultaneously. This new polishing plate was fabricated by alternately casting and curing the ring structure of soft and hard unsaturated resins. It is found that the overall stiffness of the polishing plate is improved due to the “hard support frame” of rigid-flexible polishing plate, as well as the ability of removal selectivity of the polishing plate is strengthened. The topography quality and shape accuracy of sapphire wafer polished by presented novel polishing process have been compared with those polished by conventional flexible polishing, respectively. Both experiment and simulation results are shown that the surface roughness and topographical variations of sapphire wafer polished by the novel rigid-flexible composite structure polishing plate have been greatly improved. Comparing with the conventional flexible polishing, the surface shape accuracy of the sapphire wafer polished by the presented novel polishing process can be improved by 54.1%.

show abstract

“…Due to its good chemical stability, optical properties, dielectric properties, abrasion resistance and corrosion resistance, silicon dioxide (SiO 2 ) thin films have received intensive attention within the technology and scientific community [1][2][3][4][5][6][7][8][9], and are widely used in micro-electro-mechanical systems, integrated circuits and optical devices [10][11][12][13][14][15]. Tremendous efforts have been devoted to studying the preparation technology and optical properties of the SiO 2 thin films [16][17][18][19], while little attention has been paid to their mechanical properties.…”

Section: Introductionmentioning

confidence: 99%

Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Zhang

Xing

et al. 2020

Coatings

View full text Add to dashboard Cite

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

show abstract

The effects of SiO 2 coating on diamond abrasives in sol-gel tool for SiC substrate polishing

Cited by 34 publications

References 27 publications

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

Chemical–Mechanical Polishing of 4H Silicon Carbide Wafers

A Novel Polishing Process with Rigid-Flexible Composite Structure Plate and Its Performance in Polishing Sapphire Wafer

Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Contact Info

Product

Resources

About