The effects of substrate bias on the structural and electrical properties of TiN films prepared by reactive r.f. sputtering

Igasaki, Yasuhiro; Mitsuhashi, Hiroji

doi:10.1016/0040-6090(80)90407-1

Cited by 95 publications

(16 citation statements)

References 9 publications

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“…Therefore, the film exhibits a lower hardness value. As the pulse bias voltage is applied, the ion bombarding energy increases which makes the crystal size smaller and the films dense [13,14]. Therefore, the hardness of the film tends to increase.…”

Section: Mechanical Propertiesmentioning

confidence: 97%

Microstructures and mechanical properties of chromium oxide films by arc ion plating

Wang

Song

et al. 2004

Materials Letters

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Section: Mechanical Propertiesmentioning

confidence: 97%

Microstructures and mechanical properties of chromium oxide films by arc ion plating

Wang

Song

et al. 2004

Materials Letters

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“…From an electronic point of view, it is interesting to study the role of the oxygen doping on the properties of superconducting nitrides. For materials such as TiN [9] and NbN [10], the structural and electrical properties can be tuned adding oxygen and other dopant elements [ 11 , 12 ]. For example, adding oxygen a crossover from a dirty superconducting nitride (due to paramagnetic oxygen impurities) to a semiconductor oxynitride can be expected [ 13 ].…”

Section: Introductionmentioning

confidence: 99%

Compositional effects on the electrical properties of extremely disordered molybdenum oxynitrides thin films

Hofer

Bengió

Rozas

et al. 2020

Materials Chemistry and Physics

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We report on the influence of the chemical composition on the electronic properties of molybdenum oxynitrides thin films grown by reactive sputtering on Si (100) substrates at room temperature. The partial pressure of Ar was fixed at 90 %, and the remaining 10 % was adjusted with mixtures N 2 :O 2 (varying from pure N 2 to pure O 2 ). The crystalline and electronic structures and the electrical transport of the films depend on the chemical composition. Thin films grown using oxygen mixtures up 2 % have γ-Mo 2 N phase and display superconductivity. The superconducting critical temperature T c reduces from ~ 6.8 K to below 3.0 K as the oxygen increases. On the other hand, films grown using oxygen mixtures richer than 2 % are mostly amorphous. The electrical transport shows a semiconductor-like behavior with variable-range hopping conduction at low temperatures. The analysis of the optical properties reveals that the samples have not a defined semiconductor band gap, which can be related to the high structural disorder and the excitation of electrons in a wide range of energies.

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“…[21][22][23][24][25][26] For instance, [26] in the case of Cr-Mo-Si-N coatings prepared on Si wafers by a hybrid system combining arc ion plating and magnetron sputtering, the deposition rate decreased from 2.2 to 1.6 μm/h when the negative bias voltage changed from 0 to 400 V. Authors explained this variation by a resputtering effect of a part of the coating. Whereas, in another study, [27] it has been observed that the deposition rate of TiN films deposited by RF reactive sputtering decreased from 0.17 to 0.15 nm/s when the negative bias voltage changed from 0 to 150 V and then remained almost constant for higher voltage values. This variation has been attributed more to an effect of densification of the film.…”

Section: Measurement Of Critical Loadmentioning

confidence: 89%

Effects of substrate bias voltage on adhesion of DC magnetron-sputtered copper films on E24 carbon steel: investigations by Auger electron spectroscopy

Ouis

Cailler

2013

Journal of Adhesion Science and Technology

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The adhesion strength of copper thin films on E24 carbon steel substrates was studied using the scratch test via the critical load. Coatings were deposited by a DC magnetron sputtering system. All substrates were mechanically polished; some of them were directly coated and others were ion-etched by argon ions prior to deposition process. The effects of substrate negative bias voltage during the film growth were investigated. Experimental results showed that the critical load depended on the bias voltage and that the higher bias voltage, the better adhesion. It was also observed that the deposition rate of deposited films gradually decreased with the increase of the substrate bias voltage. Furthermore, the working pressure during the substrate ion bombardment etching greatly affected the critical load. Scanning electron microscopy was used to observe the scratch tracks to accurately evaluate the critical load. Substrate surface profiles obtained by a mechanical profilometer showed that the critical load increased with the increase of the surface roughness. The analysis by Auger electron spectroscopy revealed that the interface, in case of an unbiased substrate, was relatively narrow and abrupt. However, in case of a bias voltage application, the interface was wider and more diffuse. These results suggest that the mechanisms involved in critical load enhancement are due firstly to the substrate surface roughness and the substrate temperature generated by the ion bombardment, secondly to the physical mixing in the interfacial domain and the densification of the deposited material created by the bias voltage.

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The effects of substrate bias on the structural and electrical properties of TiN films prepared by reactive r.f. sputtering

Cited by 95 publications

References 9 publications

Microstructures and mechanical properties of chromium oxide films by arc ion plating

Microstructures and mechanical properties of chromium oxide films by arc ion plating

Compositional effects on the electrical properties of extremely disordered molybdenum oxynitrides thin films

Effects of substrate bias voltage on adhesion of DC magnetron-sputtered copper films on E24 carbon steel: investigations by Auger electron spectroscopy

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