The effects of⁶⁰Co γ-ray irradiation on the DC characteristics of enhancement-mode AlGaN/GaN high-electron-mobility transistors

Abstract

The effects of 60 Co γ-ray irradiation on the DC characteristics of AlGaN/GaN enhancement-mode high-electronmobility transistors (E-mode HEMTs) are investigated. The results show that having been irradiated by 60 Co γ-rays at a dose of 3 Mrad (Si), the E-mode HEMT reduces its saturation drain current and maximal transconductance by 6% and 5%, respectively, and significantly increases both forward and reverse gate currents, while its threshold voltage is affected only slightly. The obvious performance degradation of E-mode AlGaN/GaN HEMTs is consistent with the creation of electronegative surface state charges in the source-gate spacer and gate-drain spacer after being irradiated.

Comparison of total dose effects on SiGe heterojunction bipolar transistors induced by different swift heavy ion irradiation

“…Typical extreme environments include cryogenic temperature (e.g., 77 K), high temperature (e.g., 300 • C) and a radiation environment (e.g., space), which are usually unfriendly to devices and may cause some reliability challenges. [1][2][3][4][5][6][7][8] The special device structure and unique band gap engineering in the base enable SiGe HBTs to have a wide temperature range capability and multi-Mrad total ionizing dose (TID) tolerance without hardening. [9][10][11][12][13] As a result, SiGe HBTs gain significant attention as a candidate in extreme environment applications, especially in radiation-rich space explorations.…”

A single-event transient induced by a pulsed laser in a silicon—germanium heterojunction bipolar transistor

“…Degradation and failure caused by radiation damage [1][2][3][4][5][6][7][8] are major challenges when semiconductor devices operate in a space radiation environment. Silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and bipolar complementary metal oxide semiconductor (BiCMOS) technologies have offered some compelling advantages in the field of radiofrequency (RF), analog, and mixed-signal circuit applications by combining high performance with high integration density and low cost.…”

Effects of Total-Ionizing-Dose Irradiation on Single-Event Burnout for Commercial Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors*

“…Gamma rays can influence the crystallinity of GaN film [11] and lead to the creation of traps on the AlGaN surface. [12,13] You can easily find the areas in Fig. 1.…”