The effects of surface morphology on optical and electrical properties of nanostructured AZO thin films: Fractal and phase imaging analysis

Optoelectronic properties and color chemistry of native point defects in Al:ZnO transparent conductive oxide

“…8 AZO in particular is gaining great interest as it is an indium-free, low-cost, and easy processable material. A similar variability is reported also for the transparency ratio (80÷90%) [17][18][19] and the injected free charge density (5 × 10 19 ÷ 2.0 × 10 21 cm −3 ). 3,8 For example, several experimental measurements [13][14][15][16] performed on AZO samples with similar Al contents (∼ 3%) but grown with different methods (e.g.…”

Growth and characterization of high transmittance GZO films prepared by sol-gel method

“…Similar behavior has also been observed by A. Monemdjiu et al [1] for AZO and P. K. Nayak et al [35] for GZO, both prepared by sol-gel method. A. Monemdjiu et al deem that the density…”

“…The preferred growth can be obviously observed at 4 at.% Ga. As dopant content reached 5 at.%, the intensity of (0 0 2) diffraction peak decreased. The (1) where I (h k l) is the intensity of (h k l) diffraction peak of the sample under investigation, I 0(h k l) is the intensity of (h k l) plane taken from a powder diffraction card (JCPDS , and N is the number of diffraction peaks considered in the analysis. The variation of TC (h k l) for the peaks of all the GZO thin films with different Ga content are shown in Table 1.…”

Enhancing the electrical parameters of ZnO films deposited using a low-cost chemical spray technique through Ta doping

“…It is well known that (002) is the plane with minimum surface energy and hence crystallites tend to grow along this plane of ZnO. No secondary phase corresponding to the dopant is found from the profile, indicating the purity of the deposited ZnO:Ta films and suggesting that the incorporated Ta 5+ ions either occupy the regular Zn 2+ sites in the lattice or segregated out to the non-crystalline region in the grain boundaries [33][34]. It is also noted that when the doping level is increased, the peak intensities along (002) plane decreases whereas the peak intensity of (101) plane increases at the cost of intensity of (002), indicating the doping induced reorientation of the crystallites.…”