The effects of UV radiation with single and dual wavelengths on the properties of porous ultra low k film

Zhou, Ming; Deng, Hao; Xie, Shao-Hua; Zhang, Beichao

doi:10.1016/j.mssp.2015.05.018

Cited by 6 publications

(2 citation statements)

References 14 publications

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“…However, it is not possible to exclude that in some cases OSG films can contain different groups absorbing light up to 200 nm. The complex behavior of UV light with  > 200 nm was also demonstrated by Ming et al 111 They cured PECVD films by using the different UV radiation wavelengths including quasi single wavelength light emitted from H + type bulb (254 nm), dual wavelengths emitted from D type bulb (375 and 385 nm), and dual wavelengths combined with single wavelength. The obtained results indicate that the properties of the porous OSG film treated using the dual wavelength first and then single wavelength were the best among the above three kinds of UV curing conditions.…”

Section: Figure Ii4 Anticorrelation Between Ftir Measured Concentrations Of Si-ch3 and Si-h Groupsmentioning

confidence: 68%

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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This paper presents an in-depth overview of the application and impact of UV/VUV light in advanced interconnect technology. UV light application in BEOL historically was mainly motivated by the need to remove organic porogen and generate porosity in organosilicate (OSG) low-k films. Porosity lowered the film's dielectric constant, k, which enables one to reduce the interconnect wiring capacitance contribution to the RC signal delay in integrated circuits. The UV-based low-k film curing (λ > 200 nm) proved superior to thermal annealing and electron beam curing. UV and VUV light also play a significant role in plasma-induced damage to pSiCOH. VUV light with λ < 190–200 nm is able to break Si-CH3 bonds and to make low-k materials hydrophilic. The following moisture adsorption degrades the low-k properties and reliability. This fact motivated research into the mechanisms of UV/VUV photon interactions in pSiCOH films and in other materials used in BEOL nanofabrication. Today, the mechanisms of UV/VUV photon interactions with pSiCOH and other films used in interconnect fabrication are fairly well understood after nearly two decades of research. This understanding has allowed engineers to both control the damaging effects of photons and utilize the UV light for material engineering and nanofabrication processes. Some UV-based technological solutions, such as low-k curing and UV-induced stress engineering, have already been widely adopted for high volume manufacturing. Nevertheless, the challenges in nanoscaling technology may promote more widespread adoption of photon-assisted processing. We hope that fundamental insights and prospected applications described in this article will help the reader to find the optimal way in this wide and rapidly developing technology area.

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Section: Figure Ii4 Anticorrelation Between Ftir Measured Concentrations Of Si-ch3 and Si-h Groupsmentioning

confidence: 68%

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Baklanov

Jousseaume

Рахимова

et al. 2019

Applied Physics Reviews

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“…The deposited films were evaluated by ellipsometric porosimetry that shows 23% of open porosity and 0.9 nm pore radius. More detailed description of deposition processes and the films characteristics can be found in [13,14].…”

Section: Methodsmentioning

confidence: 99%

Effect of H atoms and UV wideband radiation on cured low-k OSG films

Lopaev¹,

Zotovich²,

Zyryanov³

et al. 2022

J. Phys. D: Appl. Phys.

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Effects of hydrogen atoms and UV radiation (λ > 210 nm) on nanoporous organosilicate glass (OSG) low-k films are studied in the temperature range from 20°C to 300°C. The purpose of the study is to understand the mechanisms of low-k films modification that can happen during the cleaning from carbon containing residues formed from sacrificial porogen and accumulated during the air storage. It is shown that exposure of low-k films to hydrogen atoms at low temperature leads to slight modification of hydrocarbon bonds in hydrocarbon residues not bonded to Si. At high temperature (T≥300°C), the relative concentration of -CHx bonds changes in a complex way and depends on the amount and structure of the carbon-containing compounds. The general trend is relatively rapid decrease of –CH2 bonds concentration, while the terminal –CH3 groups are more stable. Temperature also initiates the reaction of hydrogen atoms with low-k with partial modification of low-k matrix breaking Si-O bonds. The destruction of Si-O and Si-CH2 groups leads to the formation of oxygen-deficient centers, followed by the formation of Si-(CH3)2 groups due to their interaction with methyl groups. At 300°C, the total number of Si-CH3 + Si-(CH3)2 groups starts to decrease indicating on partial removal of the methyl groups bonded to silicon. Besides with increasing temperature a slight modification of the structure of matrix under exposure to H atoms is also observed. UV radiation has almost no effect on these processes in the studied conditions. Thus, there exist the “optimal” conditions for H atom impact on OSG low-k films which allows improving film performance by removing porogen residue without damage.

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High‐performance cross‐linked SiCOH/polyimide composite film with an ultralow dielectric constant at high frequency

Yang,

Mei,

Shi

et al. 2024

J of Applied Polymer Sci

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Ultralow‐k materials with promising comprehensive performance to meet the increasing requirements of high‐frequency communication are highly desired. Here, a cross‐linked porous polymer SiCOH, synthesized via simple sol–gel method, was used as the filler to prepare SiCOH/PI composite films by physically blending, which demonstrates ultralow dielectric constant at high frequency. Notably, only 2.5% of SiCOH in the composite can significantly reduce the dielectric constant of PI from 3.0 to an ultralow value of 1.7 in the 9.5–12.4 GHz, together with a low dielectric loss of 0.029. Additionally, the SiCOH/PI composite maintains a high tensile strength of 82.4 MPa and a tensile modulus of 1.82 GPa, which is comparable to pure PI film. While the glass transition temperature (Tg) increases to 370°C and the linear expansion coefficient is reduced to 30.7 ppm/°C, both of which are superior to those of pure PI film. Moreover, by introducing the hydrophobic SiCOH into PI, the contact angle of the composite films increased to 92.0°–99.0°. This simple and low‐cost method not only effectively lowers the dielectric constant of PI but also improves the thermal stability, mechanical properties, and hydrophobic ability, greatly boosts the practical application of PI in high‐frequency communication in the future.

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The effects of UV radiation with single and dual wavelengths on the properties of porous ultra low k film

Cited by 6 publications

References 14 publications

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Impact of VUV photons on SiO2 and organosilicate low-k dielectrics: General behavior, practical applications, and atomic models

Effect of H atoms and UV wideband radiation on cured low-k OSG films

High‐performance cross‐linked SiCOH/polyimide composite film with an ultralow dielectric constant at high frequency

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