The effects of zinc diffusion on the electrical and optical properties of ZnO:Al films prepared by r.f. reactive sputtering

Igasaki, Yasuhiro; Saito, Hiromi

doi:10.1016/0040-6090(91)90004-h

Cited by 83 publications

(27 citation statements)

References 24 publications

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“…The interference fringes of the reflection spectrum shows behaviour opposite to those in the transmission spectum. However, the typical reflectance spectrum pattern is characterized by maxima and minma [14,15].…”

Section: Resultsmentioning

confidence: 99%

Influence of gamma radiation on the absorption spectra and optical energy gap of Li‐ doped ZnO thin films

El‐Fadl

El-Maghraby

Mohamad

2004

Cryst. Res. Technol.

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We have studied the effect of subsequent gamma (γ) irradiation on the absorption spectra and the optical energy gap of ZnO thin films doped with Li (ZnO:Li). The optical transmission (T) and optical reflection (R) in the wavelength range 190~800 nm of films deposited at 300 °C on sapphire, MgO or quartz substrates were measured. The dependence of the absorption coefficient α on photon energy hν was determined as a function of γ -doses. The films show direct allowed interband transition that influenced by the gamma doses. Both the optical energy gap opt g E and the absorption coefficient (α) were found to be γ -dose dependent. The results can be discussed on the basis of γ-irradiation-induced defects in the film and on the film structure. The absorption coefficient exhibits exponential dependence on photon energy obeying Urbach's rule in the absorption edge.

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Section: Resultsmentioning

confidence: 99%

Influence of gamma radiation on the absorption spectra and optical energy gap of Li‐ doped ZnO thin films

El‐Fadl

El-Maghraby

Mohamad

2004

Cryst. Res. Technol.

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“…It is also found in Figure 3 that the resistivity of the BGZO films decrease gradually with increasing of sputtering pressure up to 6mTorr. As reported, the resistivity of the films is dominated by the carrier concentration and mobility as the following equation [15]: ȡ=1/Nɟμ, where, ȡ is resistivity, N is carrier concentration and μ is mobility. From the equation, the increased carrier concentration and mobility of BGZO films is the reason for decreased film resistivity with sputtering pressure in the 3-6 mTorr range.…”

Section: Resultsmentioning

confidence: 99%

Effect of Sputtering Pressure on the Properties of Boron and Gallium Co-doped ZnO Thin Films

et al. 2016

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Abstract. B and Ga co-doped ZnO films were fabricated by RF magnetron sputtering method. The effects of sputtering pressure on the electrical, optical, structural and morphological properties of the films (BGZO) were investigated. As sputtering pressure increased up to 6mTorr, the film crystallinity was improved. At the sputtering pressure of 6mTorr, the films showed smooth and dense of film surface, lower resistivity and higher Hall mobility. It was also observed that all films showed high transparency in the visible range. The film showed blue shift of optical band gap with increaseing of sputtering pressure.

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“…As previously reported, Al doped ZnO (ZnO:Al) thin films show good transparent and conducting properties whose resistivity has achieved the order of 1 Â 10 À4 V cm with average transparency of more than 85% in visible regions [6][7][8]. Despite of the superior properties of ZnO:Al as a replacement for TCO, it shows relatively low thermal stability and degeneration problem in long time exposure to air ambient originated from high reactivity of aluminum [9,10].…”

Section: Introductionmentioning

confidence: 86%

Effects of H2 ambient annealing in fully 002-textured ZnO:Ga thin films grown on glass substrates using RF magnetron co-sputter deposition

Kim

Seo

Jang³

et al. 2009

Applied Surface Science

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The effects of zinc diffusion on the electrical and optical properties of ZnO:Al films prepared by r.f. reactive sputtering

Cited by 83 publications

References 24 publications

Influence of gamma radiation on the absorption spectra and optical energy gap of Li‐ doped ZnO thin films

Influence of gamma radiation on the absorption spectra and optical energy gap of Li‐ doped ZnO thin films

Effect of Sputtering Pressure on the Properties of Boron and Gallium Co-doped ZnO Thin Films

Effects of H2 ambient annealing in fully 002-textured ZnO:Ga thin films grown on glass substrates using RF magnetron co-sputter deposition

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