The Efficiency of a p-n Solar Diode as a Function of the Recombination Velocity within the Depletion Layer

El-Adawi, M.K.; Al-Shameri, Najla S.

doi:10.4236/opj.2012.24040

Cited by 3 publications

(1 citation statement)

References 16 publications

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“…6 shows the evolution of the external ηext and internal ηin efficiencies as a function of the surface recombination velocity Sn. This figure shows that both types of efficiency decrease when the value of the surface recombination velocity Sn increases; this is very similar to the results presented in the literature [15][16][17][18]. In addition, the internal efficiency value has small relative to the external efficiency value in the variation range of the surface recombination velocity.…”

Section: Impact Of Surface Recombination Velocity Snsupporting

confidence: 90%

Numerical Study of the Impact of Junction Depth and the Surface Recombination Velocity on Electrical Parameters of GaAs-Solar Cell

Bey¹,

Talbi²,

Hebali³

et al. 2019

IJASE

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Solar energy based on the solar cell is the most promising source among renewable energy sources. The photocurrent (Iph), open circuit voltage (Voc), maximum voltage (Vm), form factor (FF) and efficiency (η) of the solar cell are the most important parameters that can define the quality of this cell. In this work, we study the impact of the junction depth Xj and the surface recombination velocity Sn on these parameters in both external and internal cases of the solar cell in Arsenic gallium (GaAs) technology using the MATLAB software as a tool. Results show that in order to obtain highperformance of GaAs-solar cells must be the surface recombination velocity value is low, and the junction depth in submicron scale. Numerical results gave higher values of efficiencies 19.21 % and 30.1 % in external and internal cases respectively, and best electrical parameters of the GaAs-solar cell when the junction depth and the surface recombination velocity are equal to 0.2 μm and 10 2 cm/s respectively.

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Section: Impact Of Surface Recombination Velocity Snsupporting

confidence: 90%

Numerical Study of the Impact of Junction Depth and the Surface Recombination Velocity on Electrical Parameters of GaAs-Solar Cell

Bey¹,

Talbi²,

Hebali³

et al. 2019

IJASE

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New Approach to Modeling a Solar Cell in Relation to Its Efficiency—Laplace Transform Technique

El-Adawi¹,

Al-Nuaim²

2014

OPJ

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Heating a solar cell subjected to incident solar irradiance is studied. Laplace Integral Transform technique is applied to get the temperature field within the cell. The efficiency as a function of the cell temperature is estimated, and its variation with the local day time is thus clarified. Different cooling levels are considered. An illustrative example is given. The results show that the diurnal temperature variation of the cell is significant, while the efficiency is revealed to be a slowly varying function of temperature along the day time. It is revealed that as the temperature of the cell increases the efficiency decreases. Thus shading and cooling conditions may be useful to increase its efficiency.

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The Solar Cell Parameters as a Function of Its Temperature in Relation to Its Diurnal Efficiency

Shaban¹

2020

OPJ

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The variation of the temperature of the solar cell subjected to the incident global solar radiation along the local daytime in relation to its efficiency is studied. The heat balance equation is solved. The solution revealed that the cell temperature is a function of the maximum value of the daily incident global solar radiation q max , the convection heat transfer coefficient (h), the optical, physical and the geometrical parameters of the cell. The temperature dependence of the short circuit current I sc , the dark saturation current I o , the open circuit voltage V oc , and the energy band gap E g characterizing a Silicon solar cell is considered in evaluating the cell efficiency. Computations of the efficiency concerning operating conditions and astronomical locations (Egypt) as illustrative examples are given.

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The Efficiency of a p-n Solar Diode as a Function of the Recombination Velocity within the Depletion Layer

Cited by 3 publications

References 16 publications

Numerical Study of the Impact of Junction Depth and the Surface Recombination Velocity on Electrical Parameters of GaAs-Solar Cell

Numerical Study of the Impact of Junction Depth and the Surface Recombination Velocity on Electrical Parameters of GaAs-Solar Cell

New Approach to Modeling a Solar Cell in Relation to Its Efficiency—Laplace Transform Technique

The Solar Cell Parameters as a Function of Its Temperature in Relation to Its Diurnal Efficiency

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