The electrical and photophysical performances of axially-substituted naphthalene diimide-based small molecules as interface layer

Bayındır, Sinan; Yiğit, Evin; Akman, Feride; Sevgili, Ömer; Orak, İkram; Dayan, Osman

doi:10.1016/j.mseb.2023.116510

Cited by 8 publications

(7 citation statements)

References 49 publications

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“…To do this, the absorption coefficient (α) was first calculated by using eq . Here, d represents the film thickness and T represents the percent optical transmittance value. The E g ranges of 5-arylRh / N -arylRh and 5-arylRh –CN − / N -arylRh –CN − were then calculated using eq , where h ν is the photon energy and K is the material constant …”

Section: Resultsmentioning

confidence: 99%

Off-On–Off Cascade Recognition of Cyanide, Mercury, and Aluminum Using N/5-Monosubstituted Rhodanines

Bayindir,

Hussein

2024

ACS Omega

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This study aims to synthesize N-and 5-monosubstituted rhodanine derivatives as ion-sensing organics and investigate their sensing abilities. Following an easy and green approach to synthesis, the anion-sensing properties of the rhodanines were studied using colorimetric detection and spectroscopic methods. As a result of studies, rhodanines are found to be highly solventcontrolled colorimetric and fluorescent cyanide, mercury, and aluminum sensors. The stoichiometry of the interaction between CN − and both probes was determined to be 1:1 using Job's plot analysis. The binding constants (K s ) of CN − to 5-arylRh and N-arylRh were calculated to be 3.25 × 10 4 and 7.07 × 10 4 M −1 , respectively, demonstrating their high affinity for cyanide ions. The limits of detections for the 5-arylRh and N-arylRh were also determined as 356 and 617 nM, respectively. In addition to detecting CN − , 5-arylRh also serves as a specific turn-off sensor for mercury and aluminum when cyanide and hydroxide are present. This enables the fluorescence intensity to be toggled on/off by alternating the addition of CN − /OH − and Hg 2+ /Al 3+ . Furthermore, the LOD values for Hg 2+ and Al 3+ with 5-arylRh−CN − and 5-arylRh−OH − were determined to be 414 nM and 1.35 μM, respectively. Furthermore, the turn-on binding mechanisms of 5-arylRh and N-arylRh with cyanide ions were elucidated, and the experimental band gap (highest occupied molecular orbital/least unoccupied molecular orbital) energy values corroborated the proposed mechanism. Additionally, the interaction mechanism of the probes with CN − was further investigated by using the 1 H NMR technique. Collectively, these findings suggest that 5-arylRh, N-arylRh, and 5-arylRh−CN − hold promise as selective and sensitive candidate sensors for CN − , Hg 2+ , and Al 3+ ions.

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Section: Resultsmentioning

confidence: 99%

Off-On–Off Cascade Recognition of Cyanide, Mercury, and Aluminum Using N/5-Monosubstituted Rhodanines

Bayindir,

Hussein

2024

ACS Omega

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“…The energy band gap (E g ) value of the material can be determined by analyzing the UV-Vis absorption spectra using equations ( 1) and ( 2) [13][14][15]. The absorbance spectra of Mg 3 N 2 was measured in chloroform at room temperature and is presented in the inset of figure 3.…”

Section: Resultsmentioning

confidence: 99%

Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg₃N₂ interfacial layer

Sevgili,

Orak

2023

J. Phys.: Condens. Matter

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The Ag/Mg3N2/p-Si heterojunction diode (HD) with rectifier contacts with the same area in various geometries were fabricated through thermal evaporation, and the electrical performances of these diodes was compared. The geometry of the rectifier contact was found to affect various electrical properties such as ideality factor, saturation current and barrier height of HD, the rectifier rate, and the leakage current of the diodes. The experimental demonstrated the HD with a circular rectifier contact exhibited a higher rectifying ratio and lower leakage current compared to the other rectifier contacts. Hence, the design and optimization of the rectifier contact play a critical role in achieving the desired electrical properties of diode. These diodes, featuring an Mg3N2 interfacial layer and showcasing photoconductive behavior, can be utilized as photodiodes in various optoelectronic devices.

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“…2.1. The synthesis of naphthalene diimide-appended ruthenium complexes (Ru-NDIs) The synthesis of NDIs Pry-NDI-Ph (NDI-1) and Pry-NDI-Ph-PO 3 H 2 (NDI-2) to be used as starting molecules for the synthesis of target ruthenium complexes was successfully carried out in accordance with the literature [32]. Following to synthesis of NDIs, we focused on the synthesis of target Ru-NDIs (scheme 2).…”

Section: Methodsmentioning

confidence: 99%

“…The synthesis of NDI-1 and NDI-2: Asymmetric naphthalene diimide derivatives NDI-1 and NDI-2 were synthesized as in the literature (figures S1, S2, S3, and S8) [32].…”

Section: Methodsmentioning

confidence: 99%

“…The synthesis and photoelectrical investigation of new simplistic organics as organic interlayers are very important and popular [26][27][28][29][30]. Therefore, a series of studies have been carried out by our group on the efficient synthesis and photoelectrical applications of simple structured perylenediimide (PDI) and NDI derivatives (scheme 1) [31,32]. In these studies, the synthesis of novel symmetrical and asymmetrical PDIs and NDIs as simplistic interlayers for organic-based OED was carried out, and their photophysical properties were comparatively investigated with an analytical overview.…”

Section: Introductionmentioning

confidence: 99%

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The photodiode performances of NDI-appended ruthenium complexes

Seven,

Yigit,

Bayindir

et al. 2024

Nano Ex.

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The synthesis and investigation of photoelectric studies of simple organic compounds as organic interlayers are of significant importance and widely studied. As such, we synthesized naphthalene diimide (NDI)-appended ruthenium complexes (Ru-NDIs) to function as the interface layer, and have fabricated novel Al/NDIs or Ru-NDIs/p-Si devices (D1-D4) to investigate their photoelectric properties. Subsequently, we compared and discussed the photoelectric properties of these devices after synthesis and fabrication. According to this, the band-gap energy (Eg) values of organic materials were found to range from 2.95 eV to 3.14 eV, making them ideal for solar cells applications. Additionally, the photoresponse (Pr) values of Al/NDIs or Ru-NDIs/p-Si devices (D1-D4) were found to be 59.25, 1593.08, 198.77, and 134.47, respectively. Moreover, the Al/Ru-NDIs/p-Si D2 structure exhibited the highest Pr values. Experimental results indicate that since the four optoelectronic devices arranged with the derivation of synthesized compounds have good photoresponse characteristics, they can be utilized as a photosensor or photodiodes in different electronic and optoelectronic technologies.

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The electrical and photophysical performances of axially-substituted naphthalene diimide-based small molecules as interface layer

Cited by 8 publications

References 49 publications

Off-On–Off Cascade Recognition of Cyanide, Mercury, and Aluminum Using N/5-Monosubstituted Rhodanines

Off-On–Off Cascade Recognition of Cyanide, Mercury, and Aluminum Using N/5-Monosubstituted Rhodanines

Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg₃N₂ interfacial layer

The photodiode performances of NDI-appended ruthenium complexes

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The electrical and photophysical performances of axially-substituted naphthalene diimide-based small molecules as interface layer

Cited by 8 publications

References 49 publications

Off-On–Off Cascade Recognition of Cyanide, Mercury, and Aluminum Using N/5-Monosubstituted Rhodanines

Off-On–Off Cascade Recognition of Cyanide, Mercury, and Aluminum Using N/5-Monosubstituted Rhodanines

Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg3N2 interfacial layer

The photodiode performances of NDI-appended ruthenium complexes

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Impact of rectifier metal-semiconductor contact geometry on electrical properties of Schottky diodes with Mg₃N₂ interfacial layer