2006
DOI: 10.1016/j.physb.2005.10.099
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The electrical conductivity of GexIn8Se92−x (14⩽x⩽25.5 at%) chalcogenide thin films

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Cited by 9 publications
(1 citation statement)
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“…The value comes out to be 3.30 × 10 13 eV −1 cm 3 at 290 K. The values of density of states near the Fermi level and hopping energy are comparable with the results of various workers for the films of other chalcogenides [37][38][39][40]. The degree of disorder (T o ) is estimated to be 2.83 × 10 7 K. Several workers have reported the value of T o in the range of 10 5 to 10 7 K for other Se-based chalcogenides films [41][42][43] and on the basis of the value of T o , they concluded that their system is amorphous. In our case, the value of T o is also with in this range, which suggests that the present sample of a-Se 70 Te 30 nanorods is also amorphous.…”
Section: Tablesupporting
confidence: 85%
“…The value comes out to be 3.30 × 10 13 eV −1 cm 3 at 290 K. The values of density of states near the Fermi level and hopping energy are comparable with the results of various workers for the films of other chalcogenides [37][38][39][40]. The degree of disorder (T o ) is estimated to be 2.83 × 10 7 K. Several workers have reported the value of T o in the range of 10 5 to 10 7 K for other Se-based chalcogenides films [41][42][43] and on the basis of the value of T o , they concluded that their system is amorphous. In our case, the value of T o is also with in this range, which suggests that the present sample of a-Se 70 Te 30 nanorods is also amorphous.…”
Section: Tablesupporting
confidence: 85%