The Electrochemistry of Semiconductors

Semiconductor electrochemistry approach to passivity and passivity breakdown of metals and metallic alloys

“…7 From the point of view of passivity studies, it is interesting to recall a sentence from the appendix of another such book: 'The important problem remains of extending the theoretical concepts and experimental investigation methods to polycrystalline semiconductors, in particular, oxide films on so-called barrier metals and to oxide and sulfide electrodes and also to use the concepts of the electrochemistry of semiconductors for investigating the phenomena of the passivation of metals '. 8 This last task was initially undertaken by Oshe and Rozenfel'd 9 who proposed characterisation of the nature of passive films on metals and alloys by using a photopotential method initially proposed by Williams 10 for bulk semiconductors.…”

Photoelectrochemical Production of Hydrogen

“…However, when the carrier density of the semiconductor is high, or the density of the surface states (or surface charged groups), is high, which may be so in the case of most semiconductor electrodes, the potential drop in the electric double layer cannot be ignored [27,28] . The value of the electron contribution to ~X has been neglected and will be considered in section 6.4.7.…”

“…For more accurate treatment, this must be Accordingly, the surface recombination velocity [28] should be measured for each crystal in several solutions at several potential ranges.…”

“…This can be estimated more accurately by measuring the surface conductivity at steady state and under rapid potential change [ 28] . Also the comparison of the slope of MottShottky plot at steady state and under rapid potential change may be interesting.…”

The Theory of the Light‐Induced Evolution of Hydrogen at Semiconductor Electrodes

“…Although photoeffects on electrochemical reactions at semiconductor-solution interfaces have been studied intensively (1)(2)(3), few theoretical analyses have been given (4)(5)(6). These all have the substantial defect that they consider the activation of electrons arising from interactions within the semiconductor and neglect an analysis of transfer through the electric double layer at the semiconductor-solution interface.…”