2003
DOI: 10.1016/s0168-583x(02)01425-8
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The electronic structure and spectral properties of ZnO and its defects

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Cited by 416 publications
(228 citation statements)
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“…26 Recently, Djurisic et al 12,27 found that there is no simple relationship between the intensity of g ϳ 1.96 EPR signal and the visible PL; the green PL is observed for the samples which do not show EPR line at g ϳ 1.96, and they conclude that the most likely explanation for the green luminescence involves multiple defects and/or defect complexes and the major part of the visible emission originates from the centers at the nanostructures surface. Xu et al 28 calculated the levels of various defects including complex defects V O :Zn i and V Zn :Zn i . They found no states within the gap from V Zn :Zn i , whereas for V O :Zn i two levels 1.2 and 2.4 eV above the valence band were found, so this type of defect represents a possible candidate for green emission in ZnO.…”
Section: -4mentioning
confidence: 99%
“…26 Recently, Djurisic et al 12,27 found that there is no simple relationship between the intensity of g ϳ 1.96 EPR signal and the visible PL; the green PL is observed for the samples which do not show EPR line at g ϳ 1.96, and they conclude that the most likely explanation for the green luminescence involves multiple defects and/or defect complexes and the major part of the visible emission originates from the centers at the nanostructures surface. Xu et al 28 calculated the levels of various defects including complex defects V O :Zn i and V Zn :Zn i . They found no states within the gap from V Zn :Zn i , whereas for V O :Zn i two levels 1.2 and 2.4 eV above the valence band were found, so this type of defect represents a possible candidate for green emission in ZnO.…”
Section: -4mentioning
confidence: 99%
“…al. [8] by using local DOI: 10.9790/5736-1002016064 www.iosrjournals.org 63 |Page density approximation in density functional theory for ZnO system. The probable defects, here can be interstitial Zn or O (Zn i or O i ), zinc vacancy (V zn ) or the oxygen antisite (O Zn ).…”
Section: Photoluminescence Resultsmentioning
confidence: 99%
“…Therefore, the low point defect concentration in material is essential to increase the internal quantum efficiency of the near-band-edge emission. Using full-potential linear muffin-tin orbital method [18][19][20][21], energy level of various defect centres (i.e. vacancies of oxygen and zinc, antisite oxygen, interstitial zinc and oxygen) of ZnO film was calculated.…”
Section: Resultsmentioning
confidence: 99%