Implantation of 33 keV C + ions into polycrystalline U 238 with a dose of 4.3 x 10 17 cm -2 produces a physically and chemically modified surface layer that prevents further air oxidation and corrosion. X-ray photoelectron spectroscopy and secondary ion mass spectrometry were used to investigate the surface chemistry and electronic structure of this C + ion implanted polycrystalline uranium and a non-implanted region of the sample, both regions exposed to air for more than a year. In addition, scanning electron microscopy was used to examine and compare the surface morphology of the two Researchers have recently used N 2 + and C + ion implantation to modify the near surface region chemistry and structure of uranium to affect the nucleation and growth kinetics of corrosion and to passivate the surface. [2-4] These researchers used Auger electron spectroscopy (AES) in conjunction with sputter depth profiling to show that the implanted surfaces had compositional gradients containing nitrides and carbides. Oxygen and molybdenum ion implantation has also been used to affect the hydriding properties and oxidation resistance of uranium. [5,6] In addition to chemical modification, ion implantation can create special reactive surface species that include defect structures that affect the initial adsorption and dissociation of molecules on the surface. Overall the modified surface layers provide mechanical stability and protection against further air corrosion.This paper presents the results from an investigation of the surface chemistry, surface morphology and electronic structure of air-exposed C + implanted U. Examination of the resultant surface morphology with scanning electron microscopy (SEM) allowed a qualitative comparison between the implanted and the oxidized surfaces. Furthermore, core-level and valence band photoelectron spectroscopy in combination with time-ofRevised SurfSci 05133 UCRL-JRNL-210877 3 flight secondary ion mass spectrometry (ToF-SIMS) depth profiling provide a comprehensive characterization of the ion-implanted surface.
ExperimentalPrior to implantation, the polycrystalline U was prepared with a final mechanical polishing step using 0.5 um diamond paste that provided a near mirror finish. Initial oxidation of the U in laboratory air prior to introduction into the ion implanter vacuum chamber results in a ≤20 nm oxide. [7,8] The specimen was firmly clamped to a watercooled stainless steel block and sample heating during the implant was therefore minimal.The implantation was performed on the lightly oxidized U sample with a Varian 3000C ion implanter. The cryosorption pumps on the beamline and endstation maintained vacuum in the mid 10 -6 to mid 10 -7 Torr regime, respectively, during the implant. The implant was at normal incidence and CO 2 gas was used as the source material in the Freeman-type hot filament ionizer. The magnet separated the carbon +1 ions from the other ion species and the beam was rastered onto the surface in the standard fashion for ion implantation, and thus the dose is pure...