The electronic structure of CeO2 thin films: the influence of Rh surface dopants

Pfau, A.; Schierbaum, K.D.; Göpel, Wolfgang

doi:10.1016/0039-6028(95)00272-3

Cited by 50 publications

(44 citation statements)

References 14 publications

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“…According to Vayssilov et al [6] the electron transfer from metal cluster and formation of Ce 3+ is facilitated by a small energy difference between the highest occupied levels in metal and empty Ce 4f states. This view is corroborated by Pfau et al [37], who derived a nonzero overlap between Rh 4d and Ce 4f orbitals on Rh/CeO 2 (111) system. The charge transfer from Rh to CeO 2 has been also predicted by Lu and Yang [38] based on density functional (DF) calculations.…”

Section: Results and Discussion 31 Electronic Metal Support Interacsupporting

confidence: 70%

Impact of Rh–CeO interaction on CO oxidation mechanisms

Ševčíková

Kolářová

Škála

et al. 2015

Applied Surface Science

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Section: Results and Discussion 31 Electronic Metal Support Interacsupporting

confidence: 70%

Impact of Rh–CeO interaction on CO oxidation mechanisms

Ševčíková

Kolářová

Škála

et al. 2015

Applied Surface Science

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“…For example, the potentially blocking nature of the Pt/Si and CeO 2 /Pt contacts (work function differences: Φ Pt/Si = 1.05 eV and Φ CeO2/Pt = 0.6 eV [13]), has to be taken into consideration as extra voltagedependent capacitors connected in series with the dielectric film capacitance C ox and the space charge capacitance C sp at the oxide/silicon substrate interface. In similar manner, one has to consider the space charge barrier layer resistance at the Si/CeO 2 interface as a voltage-dependent resistor connected in series with the oxide film resistance when interpreting the impedance spectrum.…”

Section: Device Modelingmentioning

confidence: 99%

Investigation of Pt/Si/CeO₂/Pt MOS Device Structure by Impedance Spectroscopy

2001

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Epitaxial growth of dielectric layers on silicon substrates has attracted a great deal of recent interest given their potential applicability in the fabrication of high quality silicon-on-insulator (SOI) structures, high density capacitor devices, and stable buffer layers between silicon and other materials. Cerium dioxide (CeO 2 ) appears to be a particularly attractive candidate, given its high dielectric constant and its compatibility with Si. To date, measurements of the electrical properties of CeO 2 films on Si have been largely limited to room temperature. In this study, thin films of CeO 2 were prepared by in situ pulsed laser deposition (PLD) on n-type (100) silicon substrates, with varied deposition conditions. Capacitance-voltage measurements (C-V) were used to characterize the response of the Pt/Si/CeO 2 /Pt MOS capacitor structure. Impedance measurements were performed from room temperature to 350 °C. This enabled the independent characterization of the electrical signature of the Pt/Si interface which was found to contribute insignificantly above approximately 150 °C. The CeO 2 film conductivity was found to be thermally activated with activation energy of ~0.45 eV, with its magnitude strongly dependent on film microstructure.

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“…[22][23][24][25][26][27][28][29] These catalytically active metals formed small particles with high surface area-to-volume ratio on ceria surface, providing adsorption sites for reactants. For example, catalysts composed of Ag/ceria system have been wildly used in CO and hydrocarbon oxidation 30 for automotive exhaust treatment reactions, where CO molecules adsorbed on the surface of Ag particles react with oxygen provided by ceria to form CO 2 .…”

Section: Introductionmentioning

confidence: 99%

Interaction of Zr with CeO₂(111) Thin Film and Its Influence on Supported Ag Nanoparticles

Wang

et al. 2015

J. Phys. Chem. C

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Metal-support interaction plays a crucial role in modulating the activity and selectivity of oxidesupported metal nanoparticles in heterogonous catalysis. Zr-doped ceria is a critical component in automotive three-way catalysts. In order to understand the doping effect and Zr-CeO 2 interaction at the atomic level, here we employed X-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) to comprehensively investigate the structures, morphologies and interfacial electronic properties of submonolayer coverage of Zr deposited onto 2 nm-thick well-ordered CeO 2 (111) thin films grown on Cu(111) at different temperatures and its effect on Ag growth under ultrahigh vacuum conditions. The strong Zr-CeO 2 interaction leads to a two-dimensional (2D) growth of Zr on the CeO 2 (111) surface and the formation of a homogeneous Zr-O-Ce mixed oxide layer at room temperature, accompanied by partial reduction of Ce from 4 + to 3 + state. At high temperature, both XPS and STM results indicate that the reverse oxygen spillover from ceria substrate to Zr clusters occurs, leading to the formation of reconstructed zirconia and further reduction of ceria. Deposition of Ag onto the Zr pre-deposited CeO 2 (111) surface results in a three-dimensional growth of Ag nanoparticles with a higher particle density and smaller particle size compared to those on the pure CeO 2 (111) surface under same conditions. In addition, an enhanced thermal stability of Ag particles upon annealing was observed on such mixed oxide surface.

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The electronic structure of CeO2 thin films: the influence of Rh surface dopants

Cited by 50 publications

References 14 publications

Impact of Rh–CeO interaction on CO oxidation mechanisms

Impact of Rh–CeO interaction on CO oxidation mechanisms

Investigation of Pt/Si/CeO₂/Pt MOS Device Structure by Impedance Spectroscopy

Interaction of Zr with CeO₂(111) Thin Film and Its Influence on Supported Ag Nanoparticles

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The electronic structure of CeO2 thin films: the influence of Rh surface dopants

Cited by 50 publications

References 14 publications

Impact of Rh–CeO interaction on CO oxidation mechanisms

Impact of Rh–CeO interaction on CO oxidation mechanisms

Investigation of Pt/Si/CeO2/Pt MOS Device Structure by Impedance Spectroscopy

Interaction of Zr with CeO2(111) Thin Film and Its Influence on Supported Ag Nanoparticles

Contact Info

Product

Resources

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Investigation of Pt/Si/CeO₂/Pt MOS Device Structure by Impedance Spectroscopy

Interaction of Zr with CeO₂(111) Thin Film and Its Influence on Supported Ag Nanoparticles